2020 IEEE International Electron Devices Meeting (IEDM) 2020
DOI: 10.1109/iedm13553.2020.9372030
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Hydrogen Absorption Method Using HfOx in Crystalline In-Ga-Zn Oxide FETs for NVM Applications

T. Ono1,
Yoshinori Yanagisawa2,
Y. Komatsu3
et al.
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