Hardware is required to be further miniaturized aiming at advancement of the Internet of things and artificial intelligence. Widely used Si transistors, which have achieved miniaturization on the order of 10 nm, are apparently difficult to further miniaturize, and stacking techniques have been developed as a breakthrough. Our IGZO FETs have a gate length of 6.8 nm or less owing to the wide band gap of IGZO and an optimized transistor structure, and can be highly integrated by a contact formation technique.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.