Hydrogen

Ammerlaan, C.A.J.

doi:10.1007/978-3-662-09897-4_14

Cited by 1 publication

(3 citation statements)

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“…For example, the suppression of swirl defect formation by H doping has been reported by several authors . Moreover, it has been reported that hydrogenation of metallic impurities in Si wafers can yield a significant reduction in associated trap states, with reported reductions for interstitial Fe of a factor of 5 and up to nearly two orders of magnitude for Zn . Similarly, Ammerlaan and Stolz et al .…”

Section: Resultsmentioning

confidence: 66%

“…Moreover, it has been reported that hydrogenation of metallic impurities in Si wafers can yield a significant reduction in associated trap states, with reported reductions for interstitial Fe of a factor of 5 and up to nearly two orders of magnitude for Zn . Similarly, Ammerlaan and Stolz et al . reported the passivation of a range of both acceptors (B, Al, Ga, Be, and Zn) and donors (P, As, and Sb) by the formation of stable acceptor‐H and donor‐H complexes.…”

Section: Resultsmentioning

confidence: 89%

“…The role of atomic H as a versatile passivation agent has been widely reported in the literature . In particular, its effect on neutralizing recombination centers in Si has been well‐studied.…”

Section: Resultsmentioning

confidence: 99%

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Evolution of silicon bulk lifetime during III–V‐on‐Si multijunction solar cell epitaxial growth

García‐Tabarés

Carlin

Grassman

et al. 2015

Progress in Photovoltaics

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The evolution of Si bulk minority carrier lifetime during the heteroepitaxial growth of III-V on Si multijunction solar cell structures via metal-organic chemical vapor deposition (MOCVD) has been analyzed. In particular, the impact on Si lifetime resulting from the four distinct phases within the overall MOCVD-based III-V/Si growth process were studied: (1) the Si homoepitaxial emitter/cap layer; (2) GaP heteroepitaxial nucleation; (3) bulk GaP film growth; and (4) thick GaAsyP^y compositionally graded metamorphic buffer growth. During Phase 1 (Si homoepitaxy), an approximately two order of magnitude reduction in the Si minority carrier lifetime was observed, from about 450 to <1 (is. However, following the GaP nucleation (Phase 2) and thicker film (Phase 3) growths, the lifetime was found to increase by about an order of magnitude. The thick GaASyP^y graded buffer was then found to provide further recovery back to around the initial starting value. The most likely general mechanism behind the observed lifetime evolution is as follows: lifetime degradation during Si homoepitaxy because of the formation of thermally induced defects within the Si bulk, with subsequent lifetime recovery due to passivation by fast-diffusing atomic hydrogen coming from precursor pyrolysis, especially the group-V hydrides (PH 3 , AsH 3 ), during the III-V growth. These results indicate that the MOCVD growth methodology used to create these target III-V/Si solar cell structures has a substantial and dynamic impact on the minority carrier lifetime within the Si substrate.KEYWORDS III-V on silicon; GaAsP/Si; heteroepitaxy; MJSC; metamorphic growth; minority carrier lifetime; bottom subcell

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Section: Resultsmentioning

confidence: 66%