Silicon 2004
DOI: 10.1007/978-3-662-09897-4_14
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Hydrogen

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(3 citation statements)
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“…For example, the suppression of swirl defect formation by H doping has been reported by several authors . Moreover, it has been reported that hydrogenation of metallic impurities in Si wafers can yield a significant reduction in associated trap states, with reported reductions for interstitial Fe of a factor of 5 and up to nearly two orders of magnitude for Zn . Similarly, Ammerlaan and Stolz et al .…”
Section: Resultsmentioning
confidence: 66%
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“…For example, the suppression of swirl defect formation by H doping has been reported by several authors . Moreover, it has been reported that hydrogenation of metallic impurities in Si wafers can yield a significant reduction in associated trap states, with reported reductions for interstitial Fe of a factor of 5 and up to nearly two orders of magnitude for Zn . Similarly, Ammerlaan and Stolz et al .…”
Section: Resultsmentioning
confidence: 66%
“…Moreover, it has been reported that hydrogenation of metallic impurities in Si wafers can yield a significant reduction in associated trap states, with reported reductions for interstitial Fe of a factor of 5 and up to nearly two orders of magnitude for Zn . Similarly, Ammerlaan and Stolz et al . reported the passivation of a range of both acceptors (B, Al, Ga, Be, and Zn) and donors (P, As, and Sb) by the formation of stable acceptor‐H and donor‐H complexes.…”
Section: Resultsmentioning
confidence: 89%
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