2011
DOI: 10.1021/nl200114h
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Hybrid Si Nanowire/Amorphous Silicon FETs for Large-Area Image Sensor Arrays

Abstract: Silicon nanowire (SiNW) field-effect transistors (FETs) were fabricated from nanowire mats mechanically transferred from a donor growth wafer. Top- and bottom-gate FET structures were fabricated using a doped a-Si:H thin film as the source/drain (s/d) contact. With a graded doping profile for the a-Si:H s/d contacts, the off-current for the hybrid nanowire/thin-film devices was found to decrease by 3 orders of magnitude. Devices with the graded contacts had on/off ratios of ∼10(5), field-effect mobility of ∼50… Show more

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Cited by 47 publications
(38 citation statements)
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“…They are promising building blocks for future high-performance and high-integration nanodevices for electronics, optoelectronics, sensors, and energy science45. The capability of assembling NWs rationally in an orientation-, dimensionality-, and location-controlled manner is vital in tuning their properties toward high-integration nanodevices67. Aligned growth of inorganic NW arrays is usually achieved on lattice matched substrates via a vapor-liquid-solid (VLS) process with metallic catalysts involved89.…”
mentioning
confidence: 99%
“…They are promising building blocks for future high-performance and high-integration nanodevices for electronics, optoelectronics, sensors, and energy science45. The capability of assembling NWs rationally in an orientation-, dimensionality-, and location-controlled manner is vital in tuning their properties toward high-integration nanodevices67. Aligned growth of inorganic NW arrays is usually achieved on lattice matched substrates via a vapor-liquid-solid (VLS) process with metallic catalysts involved89.…”
mentioning
confidence: 99%
“…Si nanowires were prepared using either Au nanocrystal seeds or with Sn seeds generated in situ in the reactor from 4 or Sn 2 H 6 ), etching away the Sn seed particles during nanowire growth. Under these conditions, Si also deposits heterogeneously on the surface of the nanowires as an amorphous shell.…”
Section: Silicon Nanowire Synthesismentioning
confidence: 99%
“…Rathi et al 24 found that in their plasma enhanced CVD VLS growth of Si nanowires with Sn seeds, the H 2 plasma reacted with Sn to form volatile tin hydrides (e.g. SnH 4 or Sn 2 H 6 ) and the loss of Sn would ultimately arrest wire growth. Similarly, it is likely that hydrogen evolved from trisilane decomposition reacts with the Sn during the SFLS growth process.…”
Section: Papermentioning
confidence: 99%
“…Photosensors of nanometer scale benefits from optical (Mie) resonances, high conversion efficiency, and significant material conservation when compared with bulk devices. However, many of these nanoscale devices [3][4][5][6][7][8] (e.g., photovoltaics, photodetectors) have the problem of insufficient absorption amount due to the limit on the material absorption capacity and the small volume of individual nanowires. Therefore, 1D photosensors require more efficient absorber platforms in order to effectuate working of the advanced nanodevices.…”
Section: Introductionmentioning
confidence: 99%