Our system is currently under heavy load due to increased usage. We're actively working on upgrades to improve performance. Thank you for your patience.
2016
DOI: 10.1002/admi.201600092
|View full text |Cite
|
Sign up to set email alerts
|

Hybrid Perovskite Nanoparticles for High‐Performance Resistive Random Access Memory Devices: Control of Operational Parameters through Chloride Doping

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

2
38
0

Year Published

2017
2017
2021
2021

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 73 publications
(40 citation statements)
references
References 40 publications
2
38
0
Order By: Relevance
“…For the PAE‐treated cell, I RESET and the power consumption are reduced to as low as ≈0.06 mA and ≈0.12 mW, and the corresponding energy consumption ( J = I RESET * V RESET *reset time) is estimated to be ≈4.90 pJ per bit in the pulse operation mode. The I RESET and power consumption obtained here are far lower than those of most reported organic–inorganic hybrid perovskite‐based memristors [ 5,6,8,26–33 ] (see Table 1). One exception is the study by Ren et al, [ 34 ] who programed a layered perovskite single‐crystal ((PEA) 2 PbBr 4 )‐based memristor with extremely low I RESET /power consumption (3 × 10 −9 mA/3 pW).…”
Section: Resultsmentioning
confidence: 55%
“…For the PAE‐treated cell, I RESET and the power consumption are reduced to as low as ≈0.06 mA and ≈0.12 mW, and the corresponding energy consumption ( J = I RESET * V RESET *reset time) is estimated to be ≈4.90 pJ per bit in the pulse operation mode. The I RESET and power consumption obtained here are far lower than those of most reported organic–inorganic hybrid perovskite‐based memristors [ 5,6,8,26–33 ] (see Table 1). One exception is the study by Ren et al, [ 34 ] who programed a layered perovskite single‐crystal ((PEA) 2 PbBr 4 )‐based memristor with extremely low I RESET /power consumption (3 × 10 −9 mA/3 pW).…”
Section: Resultsmentioning
confidence: 55%
“…reported the synthesis of stable perovskite nanocrystals (PNC) having good emission characteristics, and their application in electroluminescent devices . Following this report, several studies done by various groups suggest that hybrid perovskites in nanocrystal form are suitable for most of the above‐mentioned applications . In this context, very recently, we have demonstrated the excellent energy migration properties of these materials .…”
Section: Introductionmentioning
confidence: 74%
“…In this context, very recently, we have demonstrated the excellent energy migration properties of these materials . We have also illustrated the use of PNCs for memory device applications and as sensors for the detection of explosives . Nevertheless, the real potential of PNCs through the optimal utilization of their optical and electronic properties is yet to be explored.…”
Section: Introductionmentioning
confidence: 99%
“…Choi et al developed the MAPbI 3 RS memory devices with an endurance of over 10 3 cycles, a high on/off ratio of 10 6 , and an operation speed of 640 µs . Flexible nonvolatile memory devices were reported by Gu and Lee and Bakaul et al Specifically, the RS behaviors of HOIP‐based memory devices is highly dependent on the perovskite formula composition, grain size and the film quality . One step further, Xiao and Huang and Xu et al demonstrated energy‐efficient HOIP synaptic devices.…”
Section: Ion Migration Induced Phenomena In Hoipsmentioning
confidence: 99%