Ion Migration: A “Double‐Edged Sword” for Halide‐Perovskite‐Based Electronic Devices

Abstract

Ion migration has been regarded as one of the most interesting and mysterious processes in halide-perovskite-based electronic devices. On the one hand, ion migration contributes to the hysteresis and poor stability problems of perovskite devices. On the other hand, the mobile ions can passivate the interfaces of perovskite devices, leading to improved carrier transportation and collection. This article gives a critical review on the ion migration in halide perovskite materials. It starts with a brief introduction of the origin and nature of the ion migration problem in perovskite materials. Next, the electric, photoelectric, and structural phenomena resulting from ion migration and their influence on the performance and stability of the perovskite devices are focused on. The recent literature work on the characterization of ion migration is reviewed and the characterization techniques are highlighted. Furthermore, different approaches that can suppress the ion migration process are also introduced. Finally, ion migration in the emerging all-inorganic halide perovskite materials is compared with that in hybrid halide perovskite materials, and the implications on device design and performance are discussed.

Dual‐Ion‐Diffusion Induced Degradation in Lead‐Free Cs2AgBiBr6 Double Perovskite Solar Cells

“…The new understandings of the ion-migration in the lead-free halide double perovskites can promote designing strategies for further materials and device stability improvement. Despite the adverse influence on the stability, it's noted that the ion-migration phenomenon in the metal halide perovskites is a "double-edged sword," which has been found to facilitate the fast response in photodetectors by forming dynamic electronic junctions [48,49] and also demonstrate important applications in resistance-switching memory devices [50][51][52] and artificial synapses. [53]…”

Photovoltaic Performance Enhancement of All‐Inorganic CsPbBr3 Perovskite Solar Cells Using In2S3 as Electron Transport Layer via Facile Reflux‐Condensation Process

“…The hysteresis index of the PSCs can be calculated using Equation (). [ 60 ] As shown, the hysteresis index of the In 2 S 3 ETL and TiO 2 ETL‐based PSCs is 20.4% and 27.6%, respectively.…”

“…This is owning to ion migration, which contributes to the hysteresis and poor stability problems of perovskite devices. [ 60 ]…”

Halide perovskites: A dark horse for direct X‐ray imaging

“…As is known, low dimensional perovskites generally show suppressed ion migration, along with large film resistivity and low defect states, 62,81,82 which make them of particular interests in lowering down the dark current and eliminating the baseline drifting. In 2019, Xu et al adopted two dimensional (2D) BA 2 CsAgBiBr 7 (BA: butylammonium) single crystal with a quasi-cubic geometry as the X-ray absorber for the first time.…”