Hybrid integration of III/V lasers on a silicon-on-insulator (SOI) optical board

Mitze, T.; Schnarrenberger, M.; Zimmermann, Lars; Bruns, J.; Fidorra, F.; Kreissl, J.; Janiak, K.; Fidorra, S.; Heidrich, H.; Petermann, K.

doi:10.1109/group4.2005.1516455

Cited by 16 publications

(7 citation statements)

References 4 publications

(4 reference statements)

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“…One method to couple light from the waveguide to the detector is to make use of a grating etched in the SOI waveguide to couple light vertically out of the waveguide and into the detector on top of it. Another possibility is to butt couple the detector and waveguide [19]. Flip-chip integration has been used for many years and, as a result, is a relatively mature process.…”

Section: Heterogeneous Integrationmentioning

confidence: 99%

Thin-Film III–V Photodetectors Integrated on Silicon-on-Insulator Photonic ICs

Brouckaert

Roelkens

Thourhout

et al. 2007

J. Lightwave Technol.

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We critically assess recent progress in the integration of near-infrared photodetectors onto nanophotonic siliconon-insulator (SOI) waveguide circuits. Integration of thin-film InGaAs photodetectors is studied in detail. This method consists of bonding unprocessed III-V dies onto the SOI substrate using an intermediate adhesive layer. Both benzocyclobutene and spin-on glass are studied and compared as bonding agents. After the removal of the III-V substrate, the thin-film detectors are fabricated using wafer-scale-compatible processes and lithographically aligned to the underlying SOI waveguides. The process is compatible with the fabrication of InP/InGaAsP laser diodes on SOI. A new design of an evanescently coupled metal-semiconductormetal detector is proposed, proving the ability to obtain compact and highly efficient integrated InGaAs photodetectors.

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Section: Heterogeneous Integrationmentioning

confidence: 99%

Thin-Film III–V Photodetectors Integrated on Silicon-on-Insulator Photonic ICs

Brouckaert

Roelkens

Thourhout

et al. 2007

J. Lightwave Technol.

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“…Flip-chip is the most matured technique, in which the finished optoelectronic components or chips are flipped over and bonded on the SOI circuit through soldering. 18 This sort of package-level integration is time-consuming and also less dense, since each of the chips has to be aligned and bonded sequentially. Hetero-epitaxial growth of III-V on silicon, on the other hand, offers the potential of dense integration.…”

Section: Introductionmentioning

confidence: 99%

III–V/Silicon-on-Insulator Nanophotonic Cavities for Optical Network-on-Chip

Liu¹,

Roelkens²,

Campenhout³

et al. 2010

j nanosci nanotechnol

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We review some opto-electronic devices based on the III-V/SOI heterogeneous integration platform, including lasers, modulators, wavelength converters, and photo-detectors. All of them are critical components for future on-chip interconnect and optical network-on-chip. The footprints of such devices are kept small by employing micro-cavity based structures. We give an overview of the device performances. The advantages over the all-silicon based devices are also discussed.

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“…Eutectic gold-tin (80Au20Sn) solder bumps deposited on the third plane are used for the electrical connection of active devices as well as for the precise passive alignment process. Details are given in Ref [1].…”

Section: Conceptmentioning

confidence: 99%