Hybrid III–V Silicon Photonic Crystal Cavity Emitting at Telecom Wavelengths

Mauthe, Svenja; Tiwari, Preksha; Scherrer, Markus; Caimi, Daniele; Sousa, Marilyne; Schmid, Heinz; Moselund, Kirsten E.; Triviño, Noelia Vico

doi:10.1021/acs.nanolett.0c03634

Cited by 20 publications

(19 citation statements)

References 34 publications

(81 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Small mode volumes and low thresholds can be achieved by various cavity types, like photonic crystal cavities, − metal-clad cavities, − semiconductor-on-metal cavities, , or whispering gallery mode (WGM) microdisk cavities, − based on total internal reflection. The latter have the advantage of possessing a simple fabrication scheme.…”

Section: Introductionmentioning

confidence: 99%

Single-Mode Emission in InP Microdisks on Si Using Au Antenna

et al. 2022

Self Cite

View full text Add to dashboard Cite

An important building block for on-chip photonic applications is a scaled emitter. Whispering gallery mode cavities based on III–Vs on Si allow for small device footprints and lasing with low thresholds. However, multimodal emission and wavelength stability over a wider range of temperature can be challenging. Here, we explore the use of Au nanorod antennae on InP whispering gallery mode lasers on Si for single-mode emission. We show that by proper choice of the antenna size and positioning, we can suppress the side modes of a cavity and achieve single-mode emission over a wide excitation range. We establish emission trends by varying the size of the antenna and show that the far-field radiation pattern differs significantly for devices with and without antenna. Furthermore, the antenna-induced single-mode emission is dominant from room temperature (300 K) down to 200 K, whereas the cavity without an antenna is multimodal and its dominant emission wavelength is highly temperature-dependent.

show abstract

Section: Introductionmentioning

confidence: 99%

Single-Mode Emission in InP Microdisks on Si Using Au Antenna

et al. 2022

Self Cite

View full text Add to dashboard Cite

show abstract

“…Surface passivation that can smooth the etched hole sidewalls could also alleviate scattering losses from imperfect etching surface. The material absorption may be alleviated by introducing a wavelength scale embedded active region structure using regrowth 36 or template-assisted selective epitaxy 47 in an otherwise passive BIC cavity.…”

Section: Resultsmentioning

confidence: 99%

Ultra-low threshold continuous-wave quantum dot mini-BIC lasers

Zhong

Zheng

et al. 2023

Light Sci Appl

View full text Add to dashboard Cite

Highly compact lasers with ultra-low threshold and single-mode continuous wave (CW) operation have been a long sought-after component for photonic integrated circuits (PICs). Photonic bound states in the continuum (BICs), due to their excellent ability of trapping light and enhancing light-matter interaction, have been investigated in lasing configurations combining various BIC cavities and optical gain materials. However, the realization of BIC laser with a highly compact size and an ultra-low CW threshold has remained elusive. We demonstrate room temperature CW BIC lasers in the 1310 nm O-band wavelength range, by fabricating a miniaturized BIC cavity in an InAs/GaAs epitaxial quantum dot (QD) gain membrane. By enabling effective trapping of both light and carriers in all three dimensions, ultra-low threshold of 12 μW (0.052 kW cm−2) is achieved at room temperature. Single-mode lasing is also realized in cavities as small as only 5 × 5 unit cells (~2.5 × 2.5 μm2 cavity size) with a mode volume of 1.16(λ/n)3. The maximum operation temperature reaches 70 °C with a characteristic temperature of T0 ~93.9 K. With its advantages in terms of a small footprint, ultra-low power consumption, and adaptability for integration, the mini-BIC lasers offer a perspective light source for future PICs aimed at high-capacity optical communications, sensing and quantum information.

show abstract

“…One way to locally grow single-crystalline III-Vs on Si with a low defect density, despite their lattice, thermal and polarity mismatch is by TASE, as discussed in the previous section for electronic devices [80]. Particularly the possibility for in-plane homo-and hetero-junctions [81] and seamless integration with Si features to form hybrid nanoscale cavities [82] makes TASE attractive for opto-electronic devices.…”

Section: Integrated Iii-v Optoelectronicsmentioning

confidence: 99%