Hybrid Graphene and Graphitic Carbon Nitride Nanocomposite: Gap Opening, Electron–Hole Puddle, Interfacial Charge Transfer, and Enhanced Visible Light Response

Du, Aijun; Sanvito, Stefano; Li, Zhen; Wang, Da‐Wei; Jiao, Yan; Liao, Ting; Sun, Qiao; Ng, Yun Hau; Zhu, Zhonghua; Amal, Rose; Smith, Sean C.

doi:10.1021/ja211637p

Cited by 572 publications

(438 citation statements)

References 43 publications

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“…Nevertheless, it is remarkable to find a overall enhancement of the absorption intensity in the GaN/WSe2 composites. As have been demonstrated in many pervious researches, the interlayer coupling can induce new interband transitions that lead to the evolution of the optical properties [52][53][54].…”

Section: Resultsmentioning

confidence: 85%

Design of graphene-like gallium nitride and WS2/WSe2 nanocomposites for photocatalyst applications

et al. 2016

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The geometric, electronic and optical properties of the graphene-like gallium nitride (GaN) monolayer paired with WS2 or WSe2 were studied systematically using the first-principles calculations. GaN interacts with WS2 or WSe2 via van der Waals interaction and all the most stable configurations of these two nanocomposites exhibit direct band gap characteristics. Meanwhile, the type-II heterojunctions are formed because the conduction band minimums and valence band maximums are respectively contributed by WS2 (or WSe2) and GaN. The imaginary parts of the dielectric function and the absorption spectra of the heterostructures were also calculated and the relatively improved optical properties were observed because of the new interband transitions. In addition, the band offsets as well as the intrinsic electric fields resulting from the interlayer charge transfer indicate that the electron-hole pairs recombination can be effectively inhibited, which is conducive for the photocatalysis process. Moreover, the band gaps of the heterostructures can be modulated by applying biaxial strains and even shift away the conduction band edge potential from the H + /H2 potential in a certain range, which further enhances the photocatalyst performance. The results indicate that GaN/WS2 or GaN/WSe2 nanocomposites are good candidate materials for photocatalyst or photoelectronic applications.

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Section: Resultsmentioning

confidence: 85%

Design of graphene-like gallium nitride and WS2/WSe2 nanocomposites for photocatalyst applications

et al. 2016

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“…Interestingly, many 2D ultrathin hybrid graphenebased nanocomposites have been widely studied experimentally and theoretically, such as graphene/silicene (G/S), [19][20][21] graphene/graphitic boron nitride (G/g-BN), [22][23][24] graphene/graphitic carbon nitride (G/g-C 3 N 4 ), [25][26][27], graphene/graphitic zinc oxide (G/g-ZnO) [28][29][30] and graphene/molybdenum disulphide (G/MoS 2 ) [31][32][33] These hybrid graphene-based nanocomposites show much more new properties far beyond their simplex components. Furthermore, most of them are ideal substrates for graphene to preserve the intrinsic electronic properties of graphene and substrates.…”

Section: Introductionmentioning

confidence: 99%

Tunable Schottky contacts in hybrid graphene–phosphorene nanocomposites

2015

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Combining the electronic structures of two-dimensional monolayers in ultrathin hybrid nanocomposites is expected to display new properties beyond their simplex components. Here, first-principles calculations are performed to study the structural, electronic and optical properties of hybrid graphene and phosphorene nanocomposite. It turns out that weak van der Waals interactions dominate between graphene and phosphorene with their intrinsic electronic properties preserved. Hybrid graphene and phosphorene nanocomposite shows tunable band gaps at graphene's Dirac point and a transition from hole doing to electron doing for graphene as the interfacial distance decreases. Charge transfer between graphene to phosphorene induces interfacial electron-hole pairs in hybrid graphene and phosphorene nanocomposite with enhanced visible light response.

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“…[ 158 ] In summary, the selection of the substrate supporting FETs is crucial to a variety of applications. As compared to the traditional and convenient SiO 2 /Si substrate, SrTiO 3 possesses high-κ and a smooth surface, which will work better as the supporting substrate.…”

Section: Reviewmentioning

confidence: 99%

Controllable Fabrication of Nanostructured Graphene Towards Electronics

Zeng

Xiao

Liu

et al. 2016

Adv Elect Materials

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applications, especially for fi eld-effect transistors (FETs) and sensors. [3][4][5][6] However, Klein tunneling in graphene and the related electron confi nement represent a real barrier to the development of graphene-based transistors, which results in a lack of band gap and the inability to confi ne electrons. [ 7 ] Therefore, although high mobility and high current are essential for high-frequency applications, this intrinsically high off-state current and low on/off ratio hinder the potential applications of graphene in FETs operated at room temperature.Numerous efforts have been devoted to inducing a band gap in graphene by chemical modifi cation, [8][9][10] the application of a perpendicular electric fi eld to bilayer graphene, [11][12][13] and other methods. [ 14 ] Nevertheless, these methods are uncontrollable and the as-constructed devices usually exhibit poor electronic performance. The fabrication of nanostructured graphene can be a quite effective way to introduce a bandgap. [ 15 ] Generally, nanostructured graphene refers to a graphene structure of intermediate size between microscopic and molecular, in which one dimension must be at the nanoscale, including graphene nanoribbons (GNRs), graphene nanomeshes, graphene nanodisks, graphene quantum dots, graphene nanoheterostructures, and so on. Among those graphene nanostructures, GNRs are the most popular and potentially useful ones for electronic applications; therefore, we will mainly concentrate on the progress made in GNRs. The narrowing of graphene fi lm into stripes with widths <10 nm was studied both theoretically and experimentally to create an energy band in the electronic structure of graphene due to quantum confi nement, which is the most effective way to open the band gap of graphene. In fact, the band gap is determined by the states of the edge and the width of the nanoribbon. [ 15 ] Tight binding (TB) calculations predict that GNRs terminated with 'armchair' edges can be either metallic or semi-conducting depending on their widths. Nanoribbons terminated with 'zigzag' edges are always metallic regardless of their widths. In order for the GNRs to open band gaps of a similar order as commonly used semiconducting materials (e.g. Si (1.14 eV), GaAs (1.43 eV)) widths of less than 2 nm are likely to be necessary. [ 16 ] Therefore, as the fi rst step to implement the electronic applications, nanostructured graphene must be directly synthesized Due to graphene's exceptional electronic properties, strong efforts are being made to push forward its nanoelectronic applications. However, the gapless band structure of truly 2D graphene makes it unsuitable for direct use in graphene-based fi eld-effect transistors (FETs), which is one of the most widely discussed graphene applications in electronics. Therefore, in order to accomplish graphene's applications in semiconducting nanoelectronics, it is necessary to produce nanostructured graphene with suffi ciently narrow characteristic width, thus introducing further confi nement and opening a reasonably la...

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Hybrid Graphene and Graphitic Carbon Nitride Nanocomposite: Gap Opening, Electron–Hole Puddle, Interfacial Charge Transfer, and Enhanced Visible Light Response

Cited by 572 publications

References 43 publications

Design of graphene-like gallium nitride and WS2/WSe2 nanocomposites for photocatalyst applications

Design of graphene-like gallium nitride and WS2/WSe2 nanocomposites for photocatalyst applications

Tunable Schottky contacts in hybrid graphene–phosphorene nanocomposites

Controllable Fabrication of Nanostructured Graphene Towards Electronics

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