A fractured microstructure design: A new type of piezoresistive sensor with ultra-high-pressure sensitivity (0.26 kPa(-1) ) in low pressure range (<2 kPa) and minimum detectable pressure of 9 Pa has been fabricated using a fractured microstructure design in a graphene-nanosheet-wrapped polyurethane (PU) sponge. This low-cost and easily scalable graphene-wrapped PU sponge pressure sensor has potential application in high-spatial-resolution, artificial skin without complex nanostructure design.

It is of great importance to understand the origin of high oxygen-evolving activity of state-of-the-art multimetal oxides/(oxy)hydroxides at atomic level. Herein we report an evident improvement of oxygen evolution reaction activity via incorporating iron and vanadium into nickel hydroxide lattices. X-ray photoelectron/absorption spectroscopies reveal the synergistic interaction between iron/vanadium dopants and nickel in the host matrix, which subtly modulates local coordination environments and electronic structures of the iron/vanadium/nickel cations. Further, in-situ X-ray absorption spectroscopic analyses manifest contraction of metal–oxygen bond lengths in the activated catalyst, with a short vanadium–oxygen bond distance. Density functional theory calculations indicate that the vanadium site of the iron/vanadium co-doped nickel (oxy)hydroxide gives near-optimal binding energies of oxygen evolution reaction intermediates and has lower overpotential compared with nickel and iron sites. These findings suggest that the doped vanadium with distorted geometric and disturbed electronic structures makes crucial contribution to high activity of the trimetallic catalyst.

Two-dimensional (2D) materials with the vertical intrinsic electric fields show great promise in inhibiting the recombination of photogenerated carriers and widening light absorption region for the photocatalytic applications. For the first time, we investigated the potential feasibility of the experimentally attainable 2D M 2 X 3 (M = Al, Ga, In; X = S, Se, Te) family featuring out-of-plane ferroelectricity used in photocatalytic water splitting. By using first-principles calculations, all the nine members of 2D M 2 X 3 are verified to be available photocatalysts for overall water splitting. The predicted solar-to-hydrogen efficiency of Al 2 Te 3 , Ga 2 Se 3 , Ga 2 Te 3 , In 2 S 3 , In 2 Se 3 , and In 2 Te 3 are larger than 10%. Excitingly, In 2 Te 3 is manifested to be an infrared-light driven photocatalyst, and its solar-to-hydrogen efficiency limit using the full solar spectrum even reaches up to 32.1%, which breaks the conventional theoretical efficiency limit.

Defects are inevitably present in materials and always can affect their properties. Here, firstprinciples calculations are performed to systematically study the stability, structural and electronic properties of ten kinds of point defects in semiconducting phosphorene, including the Stone-Wales (SW-1 and SW-2) defect, single (SV59 and SV5566) and double vacancy (DV585-1, DV585-2, DV555777-1, DV555777-2, DV555777-3 and DV4104) defects. We find that these defects are all much easily created in phosphorene with higher areal density compared with graphene and silicene. They are easy distinguish each other and correlate with their defective atomic structures with simulated scanning tunneling microscopy images at positive bias. The SW, DV585-1, DV555777 and DV4104 defects have little effect on phosphorene's electronic properties and defective phosphorene monolayers still show semiconducting with similar band gap values (about 0.9 eV ) to perfect phosphorene. The SV59 and DV585-2 defects can introduce unoccupied localized states into phosphorene's fundamental band gap. Specifically, the SV59 and 5566 defects can induce hole doping in phosphorene, and only the stable SV59 defect can result in local magnetic moments in phosphorene different from all other defects.

Graphene-supported single atomic metals (G-SAMs) have recently attracted considerable research interest for their intriguing catalytic, electronic, and magnetic properties. The development of effective synthetic methodologies toward G-SAMs with monodispersed metal atoms is vital for exploring their fundamental properties and potential applications. A convenient, rapid, and general strategy to synthesize a series of monodispersed atomic transition metals (for example, Co, Ni, Cu) embedded in nitrogen-doped graphene by two-second microwave (MW) heating the mixture of amine-functionalized graphene oxide and metal salts is reported here. The MW heating is able to simultaneously induce the reduction of graphene oxide, the doping of nitrogen, and the incorporation of metal atoms into the graphene lattices in one simple step. The rapid MW process minimizes metal diffusion and aggregation to ensure exclusive single metal atom dispersion in graphene lattices. Electrochemical studies demonstrate that graphene-supported Co atoms can function as highly active electrocatalysts toward the hydrogen evolution reaction. This MW-assisted method provides a rapid and efficient avenue to supported metal atoms for wide ranges of applications.

Two-dimensional phosphorene with desirable optoelectronic properties (ideal band gap, high carrier mobility, and strong visible light absorption) is a promising metal-free photocatalyst for water splitting. However, the band edge positions of the valence band maximum (VBM) and conduction band maximum (CBM) of phosphorene are higher than the redox potentials in photocatalytic water splitting reactions. Thus, phosphorene can only be used as the photocathode for hydrogen evolution reaction as a low-efficiency visible-light-driven photocatalyst for hydrogen production in solar water splitting cells. Here, we propose a new mechanism to improve the photocatalytic efficiency of phosphorene nanoribbons (PNRs) by modifying their edges for full reactions in photocatalytic water splitting. By employing first-principles density functional theory calculations, we find that pseudohalogen (CN and OCN) passivated PNRs not only show desired VBM and CBM band edge positions induced by edge electric dipole layer, but also possess intrinsic optoelectronic properties of phosphorene, for both water oxidation and hydrogen reduction in photocatalytic water splitting without using extra energy. Furthermore, our calculations also predict that the maximum energy conversion efficiency of heterojunction solar cells consisting of different edge-modified PNRs can be as high as 20% for photocatalytic water splitting.

We present a new efficient way to perform hybrid density functional theory (DFT)-based electronic structure calculations. The new method uses an interpolative separable density fitting (ISDF) procedure to construct a set of numerical auxiliary basis vectors and a compact approximation of the matrix consisting of products of occupied orbitals represented in a large basis set such as the planewave basis. Such an approximation allows us to reduce the number of Poisson solves from [Formula: see text] to [Formula: see text] when we apply the exchange operator to occupied orbitals in an iterative method for solving the Kohn-Sham equations, where N is the number of electrons in the system to be studied. We show that the ISDF procedure can be carried out in [Formula: see text] operations, with a much smaller preconstant compared to methods used in existing approaches. When combined with the recently developed adaptively compressed exchange (ACE) operator formalism, which reduces the number of times the exchange operator needs to be updated, the resulting ACE-ISDF method significantly reduces the computational cost associated with the exchange operator by nearly 2 orders of magnitude compared to existing approaches for a large silicon system with 1000 atoms. We demonstrate that the ACE-ISDF method can produce accurate energies and forces for insulating and metallic systems and that it is possible to obtain converged hybrid functional calculation results for a 1000-atom bulk silicon within 10 min on 2000 computational cores. We also show that ACE-ISDF can scale to 8192 computational cores for a 4096-atom bulk silicon system. We use the ACE-ISDF method to geometrically optimize a 1000-atom silicon system with a vacancy defect using the HSE06 functional and computes its electronic structure. We find that that the computed energy gap from the HSE06 functional is much closer to the experimental value compared to that produced by semilocal functionals in the DFT calculations.

We propose to use edge-modified phosphorene nanoflakes (PNFs) as donor and acceptor materials for heterojunction solar cells. By using density functional theory based calculations, we show that heterojunctions consisting of hydrogen- and fluorine-passivated PNFs have a number of desired optoelectronic properties that are suitable for use in a solar cell. We explain why these properties hold for these types of heterojunctions. Our calculations also predict that the maximum energy conversion efficiency of these type of heterojunctions, which can be easily fabricated, can be as high as 20%, making them extremely competitive with other types of two-dimensional heterojunctions.