Hybrid atomic force/scanning tunneling lithography

Wilder, Kathryn

doi:10.1116/1.589530

Cited by 48 publications

(21 citation statements)

References 24 publications

(20 reference statements)

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“…6,7 For example, one approach is to use an electrical bias on the scanning probe tip to generate field emission electrons. 8 The resulting localized electron beam exposes a resist covered sample, like in standard electron beam lithography, but without complex electron beam optics. Hence, high resolution lithography can be accomplished in a table top system.…”

Section: Introductionmentioning

confidence: 99%

Scanning probes in nanostructure fabrication

Kaestner

Ivanov

Schuh

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inMechanical properties of polymeric nanostructures fabricated through directed self-assembly of symmetric diblock and triblock copolymers J. Vac. Sci. Technol. B 30, 06F204 (2012); 10.1116/1.4766916 Development, analysis and control of a high-speed laser-free atomic force microscope Rev. Sci. Instrum. 81, 023707 (2010);Scanning probes have enabled modern nanoscience and are still the backbone of today's nanotechnology. Within the technological development of AFM systems, the cantilever evolved from a simple passive deflection element to a complex microelectromechanical system through integration of functional groups, such as piezoresistive detection sensors and bimaterial based actuators. Herein, the authors show actual trends and developments of miniaturization efforts of both types of cantilevers, passive and active. The results go toward the reduction of dimensions. For example, the authors have fabricated passive cantilever with a width of 4 lm, a length of 6 lm and thickness of 50-100 nm, showing one order of magnitude lower noise levels. By using active cantilevers, direct patterning on calixarene is demonstrated employing a direct, development-less phenomena triggered by tip emitted low energy (<50 eV) electrons. The scanning probes are not only applied for lithography, but also for imaging and probing of the surface before and immediately after scanning probe patterning. In summary, piezoresistive probes are comparable to passive probes using optical read-out. They are able to routinely obtain atomic step resolution at a low thermal noise floor. The active cantilever technology offers a compact, integrated system suited for integration into a table-top scanning probe nanolithography tool.

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Section: Introductionmentioning

confidence: 99%

Scanning probes in nanostructure fabrication

Kaestner

Ivanov

Schuh

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…We previously reported that by reducing the size of this chip to a width of about 0.4 mm we could reduce the capacitance to below 600 fF. 6 Figure 2 shows the effect of the chip size of the voltage ramp. Here the setpoint current was changed abruptly from 0 to 50 pA at time tϭ0.3 s. Although the difference between the setpoint current and measured current ͑the error signal͒ was negligible, the measured current was purely capacitive during the voltage ramp.…”

Section: B Control Of the Emission Currentmentioning

confidence: 99%

“…Details are given in Ref. 6. After exposure, the wafer was given a postexposure bake ͑PEB͒ for 1 min at 115°C and developed in MF-322 for 10 min.…”

Section: Lithographymentioning

confidence: 99%

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Nanometer-scale patterning and individual current-controlled lithography using multiple scanning probes

Wilder

Soh

Atalar

et al. 1999

Review of Scientific Instruments

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Scanning probe lithography ͑SPL͒ is capable of sub-30-nm-patterning resolution and nanometer-scale alignment registration, suggesting it might provide a solution to the semiconductor industry's lithography challenges. However, SPL throughput is significantly lower than conventional lithography techniques. Low throughput most limits the widespread use of SPL for high resolution patterning applications. This article addresses the speed constraints for reliable patterning of organic resists. Electrons field emitted from a sharp probe tip are used to expose the resist. Finite tip-sample capacitance limits the bandwidth of current-controlled lithography in which the tip-sample voltage bias is varied to maintain a fixed emission current during exposure. We have introduced a capacitance compensation scheme to ensure continuous resist exposure of SAL601 polymer resist at scan speeds up to 1 mm/s. We also demonstrate parallel resist exposure with two tips, where the emission current from each tip is individually controlled. Simultaneous patterning with multiple tips may make SPL a viable technology for high resolution lithography.

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“…Within the last two decades, numerous tipbased nanofabrication methods have been developed, which use, e.g., thermo-mechanical interactions, 8 mechanical displacement such as nanoshaving/nanografting, 9 electric-fieldinduced deposition, 10,11 chemical modification by local anodic oxidation, 12 and local resist exposure by tip-emitted low energy electrons. 13,14 A more detailed overview about different SPL technologies can be found in Ref. 15.…”

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confidence: 99%