Humidity effect on electrical performance of organic thin-film transistors

Li, Dawen; Borkent, Evert-Jan; Nortrup, Robert; Moon, Hee-Sung; Katz, Howard E.; Bao, Zhenan

doi:10.1063/1.1852708

Cited by 252 publications

(192 citation statements)

References 19 publications

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“…Sementara tegangan ambang bergeser ke arah positif, dari sekitar 1 V ke 2 V. Baik pada MOSFET pentacene bottomcontact maupun top-contact, pergeseran tegangan ambang ke arah positif mengindikasikan bahwa muatan yang bergerak (mobile charges) bisa diinduksikan pada lapisan semikonduktor oleh molekul uap air, sehingga tegangan gate positif yang besar dibutuhkan untuk mengompensasi muatan hole untuk mematikan MOSFET tersebut [12]. Semikonduktor organik seperti pentacene cenderung membentuk grain yang kecil pada elektrode sehingga ukuran grain dekat elektrode drain dan source menjadi kecil.…”

Section: Issn 2301 -4156unclassified

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Transistor Efek Medan Berbasis Semikonduktor Organik Pentacene untuk Sensor Kelembaban

Fadliondi¹,

Budiyanto²

2017

Jurnal Nasional Teknik Elektro dan Teknologi Informasi (JNTETI)

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Abstract-The purpose of this paper is to fabricate a humidity sensor from organic semiconductor and to understand the effect of the transistor`s structure on the sensitivity of humidity sensor. Organic MOSFETs were fabricated using organic semiconductor called pentacene. The structures were bottom-contact and topcontact. The bottom-contact pentacene MOSFET was more sensitive to humidity than the top-contact pentacene MOSFET was. When the relative humidity increased from 20 % to 70 %, for V GS = V DS = -5 V, the magnitude of drain source current of the MOSFET decreased from 0.45 µA to 0.1 µA for bottomcontact pentacene MOSFET and from 3.6 µA to 3 µA for topcontact pentacene MOSFET. As the relative humidity increased from 20 % to 70 %, for V GS = 2 V and V DS = -5 V, the magnitude of drain source current of the MOSFET increased from 0.77 nA to 3 nA for bottom-contact pentacene MOSFET and from 0.6 nA to 1.4 nA for top-contact pentacene MOSFET. As the relative humidity increased from 20 % to 70 %, the threshold voltage shifted toward positive direction, from 0.5 V to 2 V for bottomcontact pentacene MOSFET and from 1 V to 2 V for top-contact pentacene MOSFET. The result showed that the pentacene MOSFET with bottom-contact structure was more suitable for humidity sensor than that with top-contact structure.Intisari-Tujuan makalah ini adalah untuk melakukan fabrikasi sensor kelembaban dari bahan semikonduktor organik dan untuk melihat pengaruh struktur transistor terhadap sensitivitas terhadap kelembaban. MOSFET dari bahan semikonduktor pentacene telah difabrikasi. Struktur yang difabrikasi adalah bottom-contact dan top-contact. MOSFET pentacene bottom-contact lebih sensitif terhadap kelembaban dibandingkan dengan MOSFET pentacene top-contact. Saat kelembaban relatif naik dari 20% ke 70%, besar arus drain source dari MOSFET pentacene, saat V GS = V DS = -5 V, berkurang dari 0,45 µA ke 0,1 µA untuk MOSFET pentacene bottom-contact dan berkurang 3,6 µA ke 3 µA untuk MOSFET pentacene top-contact. Sementara, saat kelembaban relatif naik meningkat dari 20% ke 70%, besar arus drain source dari MOSFET pentacene, saat V GS = 2 V, V DS = -5 V, meningkat dari 0,77 nA ke 3 nA untuk MOSFET pentacene bottom-contact dan meningkat dari 0,6 nA ke 1,4 nA untuk MOSFET pentacene topcontact. Saat kelembaban relatif naik dari 20% ke 70%, tegangan ambang bergeser dari 0,5 V ke 2 V untuk MOSFET pentacene bottom-contact dan dari 1 V ke 2 V untuk MOSFET pentacene top-contact. Hasil menunjukkan bahwa MOSFET pentacene dengan struktur bottom-contact lebih cocok untuk sensor kelembaban dibandingkan struktur top-contact.

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Section: Issn 2301 -4156unclassified

“…Gbr. 7 menunjukkan bahwa MOSFET pentacene bottom-contact lebih sensitif terhadap kelembaban dibandingkan dengan MOSFET pentacene top-contact, sehingga untuk masa depan, MOSFET pentacene bottom-contact bisa diaplikasikan sebagai sensor kelembaban karena sensitivitasnya yang baik dibandingkan MOSFET pentacene top-contact [12].…”

unclassified

Transistor Efek Medan Berbasis Semikonduktor Organik Pentacene untuk Sensor Kelembaban

Fadliondi¹,

Budiyanto²

2017

Jurnal Nasional Teknik Elektro dan Teknologi Informasi (JNTETI)

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“…the combination of these two effects leads to electrical parameters degradation [24] [25] such as mobility, threshold voltage and I on /I off ratio. It has been reported that, the diffusion of impurities such as polar water molecules into grain boundaries changes the intermolecular interactions in those regions, increasing energy barrier for charge carrier intergrain transport or ions associated with water screen the electric field at the channel and lower the concentration of gate-induced mobile carriers [26]. All of the mechanisms would lead to reduce the performances of Device 1.…”

Section: Electrical Characterization and Pentacene Morphologymentioning

confidence: 99%

Electrical Instability in Pentacene Transistors with Mylar and PMMA/Mylar Gate Dielectrics Transferred by Lamination Process

Diallo¹,

Diallo²,

Kobor³

et al. 2016

JAMP

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This study deals with electrical instability under bias stress in pentacene-based transistors with gate dielectrics deposited by a lamination process. Mylar film is laminated onto a polyethylene terephthalate (PET) substrate, on which aluminum (Al) gate is deposited, followed by evaporation of organic semiconductor and gold (Au) source/drain contacts in bottom gate top contact configuration (Device 1). In order to compare the influence of the semiconductor/dielectric interface, a second organic transistor (Device 2) which is different from the Device 1 by the deposition of an intermediate layer of polymethyl methacrylate (PMMA) onto the laminated Mylar dielectric and before evaporating pentacene layer is fabricated. The critical device parameters such as threshold voltage (VT), subthreshold slope (S), mobility (µ), onset voltage (Von) and Ion/Ioff ratio have been studied. The results showed that the recorded hysteresis depend on the pentacene morphology. Moreover, after bias stress application, the electrical parameters are highly modified for both devices according to the regimes in which the transistors are operating. In ON state regime, Device 1 showed a pronounced threshold voltage shift associated to charge trapping, while keeping the µ, Ioff current and S minimally affected. Regardless of whether Device 2 exhibited better electrical performances and stability in ON state, we observed a bias stress-induced increase of depletion current and subthreshold slope in subthreshold region, a sign of defect creation. Both devices showed onset voltage shift in opposite direction.

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“…Device-to-device current uniformity over a large area is still difficult to attain due to factors such as the randomness inherent in material crystallization [2], bias-and temperaturedependent mobility [3], contact effects [4,5] and moisture-or oxygen-related instability [6]. Of great consequence to applications are also the resolution and repeatability of patterning by large-area techniques.…”

Section: Introductionmentioning

confidence: 99%

Micron-scale inkjet-assisted digital lithography for large-area flexible electronics

Sporea

Alshammari

Georgakopoulos

et al. 2013

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

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Abstract-Large-area electronics require cost-effective yet precise patterning of electrodes. We demonstrate a simple electrode patterning technique capable of micron-scale gap formation, that allows the patterning of a larger variety of metals than the current portfolio of jettable metallic ink comprises and does not require a high-temperature sintering step. However, this method can produce large variations in gap size resulting in inconsistent and irreproducible transistor drain current. We propose that source-gated transistors (SGTs) are well suited to this technique, as they have a saturated drain current independent of source-drain separation, thus leading to improved current uniformity despite inconsistencies in gap size.

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Humidity effect on electrical performance of organic thin-film transistors

Cited by 252 publications

References 19 publications

Transistor Efek Medan Berbasis Semikonduktor Organik Pentacene untuk Sensor Kelembaban

Transistor Efek Medan Berbasis Semikonduktor Organik Pentacene untuk Sensor Kelembaban

Electrical Instability in Pentacene Transistors with Mylar and PMMA/Mylar Gate Dielectrics Transferred by Lamination Process

Micron-scale inkjet-assisted digital lithography for large-area flexible electronics

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