Hot pixel behavior in WFC3 CCD detectors irradiated under operational conditions

Polidan, Elizabeth; Waczynski, Augustyn; Marshall, P.W.; Johnson, Scott D.; Marshall, C.J.; Reed, Robert A.; Kimble, Randy A.; Delo, Gregory; Schlossberg, D. J.; Russell, Anne Marie; Beck, Terry; Wen, Yiting; Yagelowich, John; Hill, Robert J.; Wassell, E. J.

doi:10.1117/12.508455

Cited by 18 publications

(13 citation statements)

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“…Until 2003 irradiations using CCDs had only been performed at room temperature [5], however the results from the CCDs used in the Wide Field Camera (WFC) two demonstrated a fixed increase in bright defect concentrations that could not be annealed at around 20 C but also a population that could [13]. This indicated the creation of two distinct dark current generating defects, one of which required a temperature greater than 20 C to anneal.…”

Section: A Brief History Of Cryogenic Irradiationsmentioning

confidence: 99%

“…This indicated the creation of two distinct dark current generating defects, one of which required a temperature greater than 20 C to anneal. Ground based studies to investigate this affect irradiated a CCD at -84 C, the number of bright defects were then monitored as the CCD was warmed in stages up to 30 C [5][6]. The annealing of bright defects at room temperature has been identified during a number of other studies using both CCDs [9][10] and a complementary metal oxide semiconductor imaging sensors (CIS) [11].…”

Section: A Brief History Of Cryogenic Irradiationsmentioning

confidence: 99%

“…Once the devices are returned they are cooled to an appropriate operating temperature and undergo an electro-optical characterisation to enable a recommendation on in-flight operation. However, a number of studies [5][6][7][8][9][10][11][12][13] have demonstrated that the post-irradiation detector performance is dependent on the temperature of the device during the irradiation and the temperature history of the device from the point at which it was irradiated. Therefore irradiations performed at room temperature may not be sufficient to demonstrate confidence in mitigation strategies as they fail to identify the impact of defect creation, as a result of annealing, before the device can be cooled for analysis.…”

Section: Introductionmentioning

confidence: 99%

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Proton irradiation of a swept charge device at cryogenic temperature and the subsequent annealing

et al. 2015

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A number of studies have demonstrated that a room temperature proton irradiation may not be sufficient to provide an accurate estimation of the impact of the space radiation environment on detector performance. This is a result of the relationship between defect mobility and temperature, causing the performance to vary subject to the temperature history of the device from the point at which it was irradiated. Results measured using Charge Coupled Devices (CCD) irradiated at room temperature therefore tend to differ from those taken when the device was irradiated at a cryogenic temperature, more appropriate considering the operating conditions in space, impacting the prediction of in-flight performance. This paper describes the cryogenic irradiation, and subsequent annealing of an e2v technologies Swept Charge Device (SCD) CCD236 irradiated at -35.4 C with a 10 MeV equivalent proton fluence of 5.0×10 8 protons.cm -2 . The CCD236 is a large area (4.4 cm 2 ) X-ray detector that will be flown on-board the Chandrayaan-2 and Hard X-ray Modulation Telescope spacecraft, in the Chandrayaan-2 Large Area Soft X-ray Spectrometer and the Soft X-ray Detector respectively. The SCD is readout continually in order to benefit from intrinsic dither mode clocking, leading to suppression of the surface component of the dark current and allowing the detector to be operated at warmer temperatures than a conventional CCD. The SCD is therefore an excellent choice to test and demonstrate the variation in the impact of irradiation at cryogenic temperatures in comparison to a more typical room temperature irradiation.

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Section: A Brief History Of Cryogenic Irradiationsmentioning

confidence: 99%

Section: A Brief History Of Cryogenic Irradiationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Proton irradiation of a swept charge device at cryogenic temperature and the subsequent annealing

et al. 2015

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“…However, it should be noted that although work comparing ground and in-orbit performance has shown similar trends for hot pixels 10 and CTI 12 the actual values are not the same, attributed to device to device behaviour and the difference in the incident radiation spectra. To be able to substantiate this claim will require comparable data from ground and in-orbit testing.…”

Section: Resultsmentioning

confidence: 93%

Postirradiation behavior of p-channel charge-coupled devices irradiated at 153 K

Gow

Wood

Murray

et al. 2016

J. Astron. Telesc. Instrum. Syst

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b e2v technologies plc, 106 Waterhouse Lane, Chelmsford, Essex, CM1 2QU, UK.Abstract. The displacement damage hardness that can be achieved using p-channel charge coupled devices (CCD) was originally demonstrated in 1997, and since then a number of other studies have demonstrated an improved tolerance to radiation-induced CTI when compared to n-channel CCDs.A number of recent studies have also shown that the temperature history of the device after the irradiation impacts the performance of the detector, linked to the mobility of defects at different temperatures. This study describes the initial results from an e2v technologies p-channel CCD204 irradiated at 153 K with a 10 MeV equivalent proton fluences of 1.24×10 9 and 1.24×10 11 protons.cm -2 . The dark current, cosmetic quality and the number of defects identified using trap pumping immediately were monitored after the irradiation for a period of 150 hours with the device held at 153 K and then after different periods of time at room temperature. The device also exhibited a flatband voltage shift of around 30 mV per krad, determined by the reduction in full well capacity.

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“…Typically this has been performed at room temperature, however, based on the evidence from other studies looking into the performance of devices irradiated at cryogenic temperatures [2][3][4][5][6][7][8][9][10][11] , this may not be sufficient for the latest precision astronomy missions where the location of even small amounts of charge needs to be accounted for. The aforementioned studies have shown that performing an irradiation at only room temperature can give misleading impressions of both the evolution of dark current, bright defects 2-5, 9-11 and CTE 2, 5-11 .…”

Section: Introductionmentioning

confidence: 99%

Initial results from a cryogenic proton irradiation of a p-channel CCD

et al. 2015

View full text Add to dashboard Cite

The displacement damage hardness that can be achieved using p-channel charge coupled devices (CCD) was originally demonstrated in 1997 and since then a number of other studies have demonstrated an improved tolerance to radiationinduced CTI when compared to n-channel CCDs. A number of recent studies have also shown that the temperature history of the device after the irradiation impacts the performance of the detector, linked to the mobility of defects at different temperatures. This study describes the initial results from an e2v technologies p-channel CCD204 irradiated at 153 K with a 10 MeV equivalent proton fluences of 1.24×10 9 and 1.24×10 11 protons.cm -2 . The number of defects identified using trap pumping, dark current and cosmetic quality immediately after irradiation and over a period of 150 hours after the irradiation with the device held at 153 K and then after different periods of time at room temperature are described. The device also exhibited a flatband voltage shift of around 30 mV per krad, determined by the reduction in full well capacity.

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Hot pixel behavior in WFC3 CCD detectors irradiated under operational conditions

Cited by 18 publications

References 0 publications

Proton irradiation of a swept charge device at cryogenic temperature and the subsequent annealing

Proton irradiation of a swept charge device at cryogenic temperature and the subsequent annealing

Postirradiation behavior of p-channel charge-coupled devices irradiated at 153 K

Initial results from a cryogenic proton irradiation of a p-channel CCD

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