Hot electron transport studies of the Cu/Si(001) interface using ballistic electron emission microscopy

Abstract

Articles you may be interested inSchottky barrier height measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) interfaces utilizing ballistic electron emission microscopy and ballistic hole emission microscopy AIP Advances 3, 112110 (2013); 10.1063/1.4831756 Hot-electron transport studies of the Ag/Si(001) interface using ballistic electron emission microscopy J. Vac. Sci. Technol. A 28, 643 (2010); 10.1116/1.3397795 Ambipolar ballistic electron emission microscopy studies of gate-field modified Schottky barriers Appl. Phys. Lett. 96, 242106 (2010); 10.1063/1.3453866Ion-bombardment effects on PtSi /n -Si Schottky contacts studied by ballistic electron emission microscopy

Nanoscale mapping of the W/Si(001) Schottky barrier

“…The native oxide layer was removed utilizing a standard chemical hydrofluoric acid treatment immediately prior to loading into a high vacuum (10 À8 mbar) deposition chamber. 24,29 The tungsten films were deposited onto the silicon using electron beam evaporation through a 2 mm by 2 mm shadow mask. The deposited metal thickness of all samples was 5 nm of tungsten with a 10 nm gold capping layer to inhibit tungsten oxide formation.…”

“…16 BEEM and BHEM have been used to measure the Schottky barrier height of many different metals to semiconductor interfaces. [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34] BEEM and BHEM are three terminal scanning tunneling microscopy (STM) techniques; hot electrons (BEEM) or holes (BHEM) are injected into a grounded metal film and travel ballistically towards the interface. Electrons (or holes) which have enough forward momentum after traveling through the metal to surmount the Schottky barrier pass into the semiconductor and are collected as the BEEM (or BHEM) current.…”

Schottky barrier height measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) interfaces utilizing ballistic electron emission microscopy and ballistic hole emission microscopy

“…The native oxide layer was removed utilizing a standard chemical hydrofluoric acid treatment immediately prior to loading into a UHV (10 −10 mbar) deposition chamber. 17,22 The metal films were deposited onto the silicon surface using standard Knudsen cells through a 2 mm by 1 mm shadow mask. The thickness of the metal films was 40 nm for all samples.…”

“…The SBHs for many metal/semiconductor systems have been extensively studied using BEEM and BHEM. [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] With BEEM the tip can be positioned with a Electronic address: vlabella@albany.edu nanoscale resolution giving spatially resolved spectra and barrier heights, which has been performed for Au/GaAs(001) diodes where a Gaussian distribution of barrier heights was observed in support of interface dipole models. 27 The power law form of the Bell and Kaiser model is the standard method for extracting the Schottky barrier height from the BEEM spectra.…”

Schottky barrier and attenuation length for hot hole injection in nonepitaxial Au on p-type GaAs

“…9,19 Au films 19, 21, and 24 nm thick were deposited through a 1 mm 2 shadow mask using a Varian electronbeam deposition system with a base pressure of 10 -7 mbar. More thicknesses were attempted; however, thinner Au did not result in a continuous film, and thicker gold resulted in BEEM currents that were too small.…”