Hot electron transport across manganese silicide layers on the Si(001) surface

Abstract

Articles you may be interested inEffect of growth temperature on ballistic electron transport through the Au/Si(001) interface

Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing ballistic electron emission microscopy

“…16 This technique has been used to measure the Schottky barrier height of many different metal/semiconductor interfaces. [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34] Im et al took $800 spectra of the Pd/ SiC diode and showed a Gaussian distribution of Schottky barrier heights consistent with the Tung model. 35 For the W/n-Si(001) interface, immediately upon metal deposition, a Schottky barrier of 0.71 eV was measured.…”