Hot electron microwave conductivity of wide bandgap semiconductors

Das, P.; Ferry, D. K.

doi:10.1016/0038-1101(76)90042-3

Cited by 157 publications

(33 citation statements)

References 8 publications

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“…Among the numerous SiC polytypes, 3C-SiC has a high saturated electron drift velocity and electron mobility due to its low phonon scattering [1,2]. Its junction breakdown electric field is 5 × 10 6 V/cm, which is sufficient to provide reverse blocking voltages above 600 V [3].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of high performance 3C‐SiC vertical MOSFETs by reducing planar defects

Nagasawa

Abe

Yagi

et al. 2008

Physica Status Solidi (b)

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The planar defect density of 3C‐SiC can be reduced by growing it on undulant‐Si substrates. However, specific stacking faults (SFs) remain, that expose the Si‐face on the (001) surface. These residual SFs increase the leakage current in devices made with 3C‐SiC. They can be eliminated using an advanced SF‐reduction method called switch‐back epitaxy (SBE) that combines polarity conversion with homoepitaxial growth. Vertical metal–oxide–semiconductor field‐effect‐transistors (MOSFETs) are fabricated on 3C‐SiC with SBE, varying in size from a single cell with an area of (30 × 30) μm2 to 12,000 hexagonal cells on a (3 × 3) mm2 chip. The MOSFET characteristics suggest that currents greater than 100 A are realistic for blocking voltages of 600–1,200 V by increasing the number of cells with reduced cell‐pitch. The combination of blocking voltage capability with a demonstrable high current capacity shows that 3C‐SiC is well‐suited for use in vertical MOSFETs for high‐ and medium‐power electronic applications. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 99%

Fabrication of high performance 3C‐SiC vertical MOSFETs by reducing planar defects

Nagasawa

Abe

Yagi

et al. 2008

Physica Status Solidi (b)

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“…This leads to a significant sheet carrier concentration on the GaN side of the interface [5] (up to 2×10 13 cm -2 ) and can cause field (differentials) up to 3 MV/cm. One reason for the interest in this heterostructure is the high velocity that is expected in GaN itself [6,7,8], and the high thermal conductivity, both of which lead to expectations of high power semiconductor devices [9]. In the AlGaN/GaN heterojunction, even higher velocities have been predicted for the electrons in the accumulation layer at the interface [10], with a peak velocity above 3×10 7 cm/s at around 140 kV/cm, based upon ensemble Monte Carlo techniques utilizing an empirical pseudopotential band structure.…”

Section: Introductionmentioning

confidence: 99%

High‐field electron transport in AlGaN/GaN heterostructures

Barker

Ferry

Goodnick

et al. 2005

phys. stat. sol. (c)

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Experimental studies have been performed on the velocity-field characteristics of AlGaN/GaN heterostructures. A pulsed voltage input in combination with a four-point measurement was used in a 50 Ω environment to determine the drift velocity of electrons in the two-dimensional electron gas as a function of the applied electric field. These measurements show an apparent saturation velocity near 3.1×10 7 cm/s, at a field of 140 kV/cm. A comparison of these studies shows that the experimental velocities are close to previously published simulations based upon Monte Carlo techniques.

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“…One reason for the interest in this heterostructure is the high velocity that is expected in GaN itself [7,8,9], and the high thermal conductivity, both of which, together with the high breakdown field, lead to expectations of high power semiconductor devices [10]. In the AlGaN/GaN heterojunction, even higher velocities have been predicted for the electrons in the accumulation layer at the interface [11], with a peak velocity above 3×10 7 cm/s at around 140 kV/cm, based upon ensemble Monte Carlo techniques utilizing an empirical pseudopotential band structure.…”

Section: Introductionmentioning

confidence: 99%

High field effects of GaN HEMTs.

Barker

Shul

2004

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This report represents the completion of a Laboratory-Directed Research and Development (LDRD) program to develop and fabricate geometric test structures for the measurement of transport properties in bulk GaN and AlGaN/GaN heterostructures. A large part of this study was spent examining fabrication issues related to the test structures used in these measurements, due to the fact that GaN processing is still in its infancy. One such issue had to do with surface passivation. Test samples without a surface passivation, often failed at electric fields below 50 kV/cm, due to surface breakdown. A silicon nitride passivation layer of approximately 200 nm was used to reduce the effects of surface states and premature surface breakdown. Another issue was finding quality contacts for the material, especially in the case of the AlGaN/GaN heterostructure samples. Poor contact performance in the heterostructures plagued the test structures with lower than expected velocities due to carrier injection from the contacts themselves. Using a titanium-rich ohmic contact reduced the contact resistance and stopped the carrier injection. The final test structures had an etch constriction with 3 varying lengths and widths (8×2, 10×3, 12x3, 12×4, 15×5, and 16×4 m) and massive contacts. A pulsed voltage input and a four-point measurement in a 50 Ω environment was used to determine the current through and the voltage dropped across the constriction. From these measurements, the drift velocity as a function of the applied electric field was calculated and thus, the velocity-field characteristics in n-type bulk GaN and AlGaN/GaN test structures were determined. These measurements show an apparent saturation velocity near to 2.5×10 7 cm/s at 180 kV/cm and 3.1×10 7 cm/s, at a field of 140 kV/cm, for the bulk GaN and AlGaN heterostructure samples, respectively.These experimental drift velocities mark the highest velocities measured in these materials to date and confirm the predictions of previous theoretical models using ensemble Monte Carlo simulations.

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Hot electron microwave conductivity of wide bandgap semiconductors

Cited by 157 publications

References 8 publications

Fabrication of high performance 3C‐SiC vertical MOSFETs by reducing planar defects

Fabrication of high performance 3C‐SiC vertical MOSFETs by reducing planar defects

High‐field electron transport in AlGaN/GaN heterostructures

High field effects of GaN HEMTs.

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