High‐field electron transport in AlGaN/GaN heterostructures

Barker, J. M.; Ferry, D. K.; Goodnick, Stephen M.; Koleske, Daniel; Allerman, Andrew A.; Shul, R. J.

doi:10.1002/pssc.200461384

Cited by 6 publications

(5 citation statements)

References 16 publications

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“…Up to now the I-V characterization of the ungated AlGaN / GaN QW ͑all with passivated surface͒ leads to ambiguous results, and various hypotheses were discussed in the literature. [2][3][4][5][6][7] Experiments show not only unexpected low values of E cr and sat , but also the questionable mechanism of the current saturation.…”

Section: ͑3͒mentioning

confidence: 99%

“…A Monte Carlo simulation of the hot-electron transport has shown a good agreement with the experiments only up to 30 kV/ cm. 5 Different sample preparation was reported by Barker et al 6,7 Instead of the ordinary TLM structure, the authors used a special test structure providing a four-point measurement with contacts eliminating a possible carrier injection. For the case of 10 ns long pulses the authors reported values close to theoretical predictions: E cr ϳ 140 kV/ cm and sat ϳ 3.1 ϫ 10 7 cm/ s. However, an unexpected dependence of I sat on L has also been observed, and for a different sample and 200 ns pulse regime the authors obtained E cr ϳ 30 kV/ cm and sat ϳ 1.1ϫ 10 7 cm/ s.…”

Section: ͑3͒mentioning

confidence: 99%

“…The value of sat has been determined either from a HEMT small signal parameters 1 or from pulsed and/or direct current ͑dc͒ currentvoltage ͑I-V͒ characteristics of ungated HEMT-like structures. [2][3][4][5][6][7][8] In the latter case the transfer length method 9 ͑TLM͒ test structure with various contact-to-contact distances have often been used for characterization.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Current conduction and saturation mechanism in AlGaN∕GaN ungated structures

Kuzmı́k

Bychikhin

Pogány

et al. 2006

Journal of Applied Physics

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Current conduction and saturation mechanisms in ungated AlGaN/GaN/SiC transfer length method test structures with contactto-contact distance L varying from 2 to 32 m are investigated. Current-voltage ͑I-V͒ characteristics are measured in the pulsed and in the direct current ͑dc͒ regimes. The pulsed characteristics were evaluated for the pulse duration of 50 ns, and together with the dc ones show that the current saturation value depends on the contact distance and the current saturation occurs at an electrical field Ӷ150 kV/cm. This behavior contradicts the theoretical expectation valid for the ungated structures. An analysis of the I-V characteristics shows that the dc saturation current values are up to 5.5 times lower than those under the pulsed conditions for the same L. If the self-heating effect was supposed to be responsible for this observation, an unrealistic temperature rise would be required. This together with the observed ϳ1 s long transition time into the steady state, which is several orders of magnitude longer than what one can expect for the thermal transient, excludes the dominant role of the thermal effects in the current saturation mechanism. A model of the current conduction and saturation mechanism is suggested where the charge injection from the contacts and charging of the AlGaN surface are responsible for a AlGaN/GaN channel depletion. Thus the saturation mechanism is similar to that occurring in gated structures. The model explains well the observed dependencies and is further validated by a transient interferometric mapping method. This thermooptical method operated under the pulsed conditions allows to evaluate the free carrier concentration profiles along the structure channel and to make the comparisons with the concentration below Ohmic contacts. A strong channel depletion effect has been observed for the structure with L=32 m in comparison to the negligible surface depletion effect found in the L=2 m structure. This is in full agreement with the suggested model of the current saturation mechanism and with the measured I-V characteristics.

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Section: ͑3͒mentioning

confidence: 99%

Section: ͑3͒mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Current conduction and saturation mechanism in AlGaN∕GaN ungated structures

Kuzmı́k

Bychikhin

Pogány

et al. 2006

Journal of Applied Physics

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“…In 2005, Ramonas et al [264] further developed this analysis, focusing on how hot-phonon effects influence power dissipation within AlGaN/GaN channels. The high-field electron transport within AlGaN/GaN heterostructures was examined and reported on in 2005 by Barker et al [265] and Ardaravičius et al [266]. A numerical simulation of the current-voltage characteristics of AlGaN/GaN high electron mobility transistors at high temperatures was performed by Chang et al [267] and reported on in 2005.…”

Section: Electron Transport Within Gan: a Reviewmentioning

confidence: 98%

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Siddiqua

Hadi

Shur

et al. 2015

J Mater Sci: Mater Electron

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Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and optoelectronic device applications. As informed device design requires a firm grasp of the material properties of the underlying electronic materials, the electron transport that occurs within the wide energy gap semiconductors has been the focus of considerable study over the years. In an effort to provide some perspective on this rapidly evolving and burgeoning field of research, we review analyzes of the electron transport within some wide energy gap semiconductors of current interest in this paper. In order to narrow the scope of this review, we will primarily focus on the electron transport that occurs within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide in this review, these materials being of great current interest to the wide energy gap semiconductor community; indium nitride, while not a wide energy gap semiconductor in of itself, is included as it is often alloyed with other wide energy gap semiconductors, the resultant alloys being wide energy gap semiconductors themselves. The electron transport that occurs within zinc-blende gallium arsenide is also considered, albeit primarily for bench-marking purposes. Most of our discussion will focus on results obtained from our ensemble semi-classical three-valley Monte Carlo simulations of the electron transport within these materials, our results conforming with state-of-the-art wide energy gap semiconductor orthodoxy. A brief tutorial on the Monte Carlo electron transport simulation approach, this approach being used to generate the results presented herein, is also provided. Steady-state and transient electron transport results are presented. The evolution of the field, and a survey of the current literature, are also featured. We conclude our review by presenting some recent developments on the electron transport within these materials.

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“…In 2005, Ramonas et al[310] further developed this analysis, focusing on how hot-phonon effects influence power dissipation within AlGaN/GaN channels. The high-field electron transport within AlGaN/GaN heterostructures was examined and reported on in 2005 by Barker et al[311] and Ardaravic̆ius et al[312]. A numerical simulation of the current-voltage characteristics of AlGaN/GaN high electron mobility transistors at high temperatures was performed by Chang et al[313] and reported on in 2005.…”

mentioning

confidence: 99%

Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride

Siddiqua

O’Leary

2018

J Mater Sci: Mater Electron

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Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and opto-electronic device applications. As informed device design requires a firm grasp on the material properties of the underlying electronic materials, the electron transport that occurs within the wide energy gap semiconductors has been the focus of considerable study over the years. We review analyses of the electron transport within some wide energy gap semiconductors of current interest. In this thesis, I primarily focus on the electron transport that occurs within the wurtzite and zinc-blende phases of gallium nitride and indium nitride, these materials being of great current interest to the wide energy gap semiconductor community; indium nitride, while not a wide energy gap semiconductor of itself, is included as it is often alloyed with other wide energy gap semiconductors. The electron transport that occurs within zinc-blende gallium arsenide has also been considered. Most of the discussion focus on the steady-state and transient electron transport results obtained from the ensemble semi-classical three-valley Monte Carlo simulations of the electron transport within these materials.The evolution of the field, a survey of the current literature, and some applications for the results will also be featured. Based on this analysis, we have drawn the following conclusions. First, it is found that all of the velocityfield characteristics corresponding to the materials under investigation in this analysis exhibit peaks, regions of negative differential mobility, and regions of high-field saturation. Wurtzite Indium nitride, with its small electron effective mass, exhibits the highest peak electron drift velocity. The transient overshoot observed for the case of wurtzite Indium nitride is also found to be the most pronounced of all of the materials considered in this analysis. This suggests that the wurtzite phase of Indium nitride and its zinc-blende counterpart may offer great potential for future electron device applications. vi Rensselaer Polytechnic Institute, for example, was one of the first researchers to explore the wide energy gap semiconductors, GaN and InN, through the use of Monte Carlo electron transport simulations. In fact, some of his initial explorations into the nature of the electron transport within these materials were performed by him in concert with Dr. O'Leary. Dr. Shur and Dr. O'Leary have established a vigorous and active research collaboration, and the papers that I wrote within the scope of my doctoral studies were merely the latest of a large number of publications that have arisen from this collaboration. Dr. Shur commented on each manuscript, and made some suggestions in terms of interpreting the results. These definitely helped improve the clarity and effectiveness of my publications.

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High‐field electron transport in AlGaN/GaN heterostructures

Cited by 6 publications

References 16 publications

Current conduction and saturation mechanism in AlGaN∕GaN ungated structures

Current conduction and saturation mechanism in AlGaN∕GaN ungated structures

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review

Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride

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