Hot electron injector Gunn diode for advanced driver assistance systems

Förster, A.; Lepsa, Mihail Ion; Stock, J.; Montanari, Simone

doi:10.1007/s00339-007-3872-5

Cited by 42 publications

(23 citation statements)

References 30 publications

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“…The rocking curves full widths at half maximum (FWHM) of HRXRD for GaN (0002) and GaN (10-12) reflections primarily depend on the densities of screw and edge component TDs, respectively. 12 The FWHM results of the GaN (0002) and (10)(11)(12) reflections and calculated TDs densities are listed in Table I, indicating a great discrepancy of TDs distribution between the THEI and BHEI structures. It is well known that a low TDs density in the transit region of GaN Gunn diode is essential in guaranteeing the stable operation; otherwise, breakdown and burnout would happen in the structures.…”

Section: B Hrxrd Characterizationmentioning

confidence: 99%

“…This kind of spike doping layers has been widely used in the heterostructural Gunn diode based on conventional III-V compounds in order to control the electric field behind the graded gap barrier and retain the hot electron properties, otherwise, a depletion region would appear at the beginning of the transit region when the barrier is forward biased. 10,11 That we choose the comparatively low Al fraction of 15% in HEI layer aims to weaken the excessive accumulation of polarization charges at the heterointerface, particularly for the THEI structure. From the (0002) HRXRD x-2h measurement of two structures, we found the maximal AlGaN peak of THEI and BHEI structures locate at 34.9281 and 34.9179 , respectively, corresponding to the Al fraction of around 15.1% and 14.8%, respectively, according to the calculation in Ref.…”

Section: Epitaxial Growthmentioning

confidence: 99%

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Dislocation blocking by AlGaN hot electron injecting layer in the epitaxial growth of GaN terahertz Gunn diode

Yang

Zhang

et al. 2013

Journal of Applied Physics

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This paper reports an efficient method to improve the crystal quality of GaN Gunn diode with AlGaN hot electron injecting layer (HEI). An evident reduction of screw dislocation and edge dislocation densities is achieved by the strain management and the enhanced lateral growth in high temperature grown AlGaN HEI layer. Compared with the top hot electron injecting layer (THEI) structure, the bottom hot electron injecting layer (BHEI) structure enhances the crystal quality of transit region due to the growth sequence modulation of HEI layer. A high Hall mobility of 2934 cm2/Vs at 77 K, a nearly flat downtrend of Hall mobility at the temperature ranging from 300 to 573 K, a low intensity of ratio of yellow luminescence band to band edge emission, a narrow band edge emission line-width, and a smooth surface morphology are observed for the BHEI structural epitaxy of Gunn diode, which indicates that AlGaN BHEI structure is a promising candidate for fabrication of GaN Gunn diodes in terahertz regime.

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Section: B Hrxrd Characterizationmentioning

confidence: 99%

Section: Epitaxial Growthmentioning

confidence: 99%

Dislocation blocking by AlGaN hot electron injecting layer in the epitaxial growth of GaN terahertz Gunn diode

Yang

Zhang

et al. 2013

Journal of Applied Physics

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“…The graded-gap launcher itself consists of five 10nm thick layers with a discrete increase in Al content in each (1.7%, 8%, 16%, 24%, and 32%) towards the anode. A 5nm and 10nm, nominally undoped GaAs spacer layers are included at each side of the launcher to prevent dopant diffusion and thus degradation of the launcher 22 .…”

Section: Gunn Diode Epitaxial Structurementioning

confidence: 99%

Time-domain analysis of sub-micron transit region GaAs Gunn diodes for use in terahertz frequency multiplication chains

et al. 2010

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Simulated RF time-domain characteristics for advanced Gunn diodes with hot electron injection and sub-micron transit region lengths for use at frequencies over 100GHz are reported. The physical models used have been developed in SILVACO and are compared to measured results. The devices measured were originally fabricated to investigate the feasibility of GaAs Gunn diode oscillators capable of operating at D-band frequencies and ultimately intended for use in high power (multi-mW) Terahertz sources (~0.6THz) when used in conjunction with novel Schottky diode frequency multiplier technology. The device models created using SILVACO are described and the DC and time-domain results presented. The simulations were used to determine the shortest transit region length capable of producing sustained oscillation. The operation of resonant disk second harmonic Gunn diode oscillators is also discussed and accurate electromagnetic models created using Ansoft High Frequency Structure Simulator presented. Novel methods for combining small-signal frequency-domain electromagnetic simulations with time-domain device simulations in order to account for the significant interactions between the diode and oscillator circuit are described.

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“…As the operating frequency increases GaAs Gunn diode design and its physical limiting factors become critical. Recently, Gunn diodes are investigated in order to generate signals at millimeter-wave where the attention has been drawn for adaptive cruise control systems and military radar sensors [2]. In practice, InP Gunn diodes operate in fundamental mode up to 110 GHz [3][4], whereas GaAs Gunn diodes operate in second harmonic mode at 94 GHz [5][6][7].…”

Section: Introductionmentioning

confidence: 99%