Improvement of Fabrication Technology for InP Gunn Devices Using Trench Method

Kim, M.R.; Lee, S.D.; Lee, J.S.; Kwak, No-Sung; Kim, S.D.; Rhee, Jin Koo

doi:10.1109/gsmm.2008.4534546

Cited by 4 publications

(3 citation statements)

References 11 publications

(13 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The epitaxial structure [10,13,14] was grown on a 2-inch, 370-µm thick, and semi-insulating (SI) InP substrate by molecular beam epitaxy (MBE). The layers were a 300nm InGaAs n+ layer doped over level of 2×10 18 cm −3 , a 1.8-µm-thick n+ InP buffer layer doped at a level of 1×10 18 cm −3 , a 1.5-µm-thick InP active layer doped with Si at 1.1×10 16 cm −3 , and a 0.3-µm-thick n+ InP contact layer doped with Si at 2×10 18 cm −3 as shown in Fig.…”

Section: Fabrication Of Inp Gunn Diodesmentioning

confidence: 99%

Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode

et al. 2013

View full text Add to dashboard Cite

show abstract

Section: Fabrication Of Inp Gunn Diodesmentioning

confidence: 99%

Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode

et al. 2013

View full text Add to dashboard Cite

show abstract

“…In the recent years, there have been numerous improvements made on the Gunn diode as a THz source device. Many studies on the fabrication of Gunn diode with different material systems such as GaAs [2] and InP [3] have been performed to utilise their unique material properties. InP has become a preferred material for the design of Gunn diode due to its high efficiency and high operating frequency [4].…”

Section: Introductionmentioning

confidence: 99%

Enhanced InP-based Gunn Diodes with Notch-d-doped Structure for Low-THz Applications

Akhbar

Choo

Ong

2023

JETAP

View full text Add to dashboard Cite

In this work, Monte Carlo simulation is performed for InP Gunn diode with a notch-d-doped structure. It is found that the presence of the d-doped layer has improved the Gunn diode performance significantly as compared to the conventional notch structure. The d-doped effect caused an increment in the fundamental operating frequency and current harmonic amplitude in InP Gunn diodes by modifying the electric field profile within the device. An InP notch-d-doped Gunn diode with device length of 800 nm under 3V DC bias is capable of producing AC current signal of 287 GHz, reaching the THz region, with its harmonic amplitude being 5.68×108 A/m2. It is observed that InP-based notch-d-doped Gunn diode is able to generate signals at a higher operating frequency with a larger output power as compared to that of GaAs due to the higher electron drift velocity and threshold field in InP material.

show abstract

“…Its high-frequency property coupled with wide bandwidth is valuable for highpower and high-frequency applications [3]. With the use of common materials such as GaAs [4] and InP [5], a simple device structure could produce an economical compact THz source to cater to the evolving IoT technology.…”

Section: Introductionmentioning

confidence: 99%

Analysis of notch-δ-doped GaAs-based Gunn diodes

Akhbar¹,

Ong²

2022

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

The performances of GaAs-based Gunn diodes with a notch-δ-doped structure have been studied in this work. The δ-doped effect has been analysed using Monte Carlo modelling in terms of temporal evolution of current density, electric field profile, electron energy, mean velocity, and occupancy in Γ and higher valleys. The presence of a δ-doped layer after the notch caused a significant increase in the harmonic current amplitude of the device, where the growth of high field domain can be attributed to a slow electron track due to the well-known Gunn effect and an additional fast electron track which appears over a short time window when the domain is reaching the anode. An optimised GaAs notch-δ-doped structure with 700 nm device length including 100 nm notch and 5 nm δ-doped layer can generate signals at fundamental frequency of 262 GHz with a current harmonic amplitude of 29.4×107 A/m2, which is almost twice of that without δ-doped layer. Its second and third harmonic signals are found substantial reaching into the THz range of 512 GHz and 769 GHz.

show abstract

Improvement of Fabrication Technology for InP Gunn Devices Using Trench Method

Cited by 4 publications

References 11 publications

Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode

Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode

Enhanced InP-based Gunn Diodes with Notch-d-doped Structure for Low-THz Applications

Analysis of notch-δ-doped GaAs-based Gunn diodes

Contact Info

Product

Resources

About