We have fabricated InP Gunn diodes using the improved fabrication technology in order to eliminate the problems resulting from the fabrication procedure of InP Gunn diodes for operation at 94 GHz. We see that the developed fabrication procedure using the trench method reduces the stress in InP epi-layers during alloy, and therefore the cracks in epilayers were reduced.
We have developed a new cell technology with extremely small cell size of 0.14pm2 using 0.12pm process. The SelfAligned Shallow Trench Isolation (SA-STI) and Self-Aligned Source (SAS) structure are adopted to minimize the cell size.To scale down the cell gate length and to improve the cell performance, high aspect-ratio floating gate and channel erasing scheme are used. Excellent endurance characteristics, tight threshold voltage distribution and good reliability have been verified in this work.
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