1995
DOI: 10.1063/1.359106
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Hot-electron-induced electroluminescence and avalanche multiplication in hydrogenated amorphous silicon

Abstract: High-electric-field phenomena above 1 MV/cm in a-Si:H have been investigated using an ac-driven double-insulating electroluminescent device structure. An emission tailing into energies above the optical energy gap has been observed, giving direct evidence for the existence of hot electrons in a-Si:H generated by an electric field. An analysis of the emission spectrum indicates an average energy of 0.13 eV and a mean free path of 1.0 nm for hot electrons. Electroabsorption reveals that the internal electric fie… Show more

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Cited by 9 publications
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