Hot-electron and hole-emission effects in short n-channel MOSFET's

Hofmann, K.R.; Werner, C.; Weber, W.; Dorda, G.

doi:10.1109/t-ed.1985.22000

Cited by 308 publications

(59 citation statements)

References 34 publications

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“…The model establishes a nonlocal relation between the effective electron temperature and the driftfield [20]. Thus, the carrier probability to acquire certain energies depends on the complete profile of the electric field in the channel region [22].…”

Section: A Hot Electron Injectionmentioning

confidence: 99%

Flash memory cells-an overview

et al. 1997

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Section: A Hot Electron Injectionmentioning

confidence: 99%

Flash memory cells-an overview

et al. 1997

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“…However, the zone inside the oxide where the electric field lines both originate and terminate at the substrate (close to the point where the transverse electric field changes sign), gets reduced in spread due to stronger transverse fields. Note that the two-dimensional (2-D) field distribution in this zone is responsible for lateral spreading of injected carriers inside the oxide [7]. Therefore for thinner , larger carrier injection takes place, but the injected carriers are confined to a narrow zone and cannot spread out, and the profiles get thinner in spread but larger in magnitude (see Fig.…”

Section: B Physical Explanation Of the Effect Of Device Scaling On Dmentioning

confidence: 99%

Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETs

Mahapatra

Parikh

Rao

et al. 2000

IEEE Trans. Electron Devices

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Abstract-The influence of channel length and oxide thickness on the hot-carrier induced interface () and oxide ( ) trap profiles is studied in n-channel LDD MOSFET's using a novel charge pumping (CP) technique. The technique directly provides separate and profiles without using simulation, iteration or neutralization, and has better immunity from measurement noise by avoiding numerical differentiation of data. The and profiles obtained under a variety of stress conditions show well-defined trends with the variation in device dimensions. The generation has been found to be the dominant damage mode for devices having thinner oxides and shorter channel lengths. Both the peak and spread of the profiles have been found to affect the transconductance degradation, observed over different channel lengths and oxide thicknesses. Results are presented which provide useful insight into the effect of device scaling on the hot-carrier degradation process.Index Terms-Channel length and oxide thickness dependence, charge pumping, hot-carrier effect, MOSFET, spatial profiling of damage.

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“…Note that the crucial difference between NBTI and HCI or FN is the presence of hot electrons (HE) and hot holes (HH) for the latter stress conditions [4], [7], [10]. Significant efforts were made in the past to understand whether only electrons, or only holes, or both electrons and holes are responsible for breaking of ≡ Si−H bonds during HCI and FN stress [5]- [10], [12], [19], [20]. The higher n of N IT generation during uniform FN stress can be explained within the 1-D R-D framework by assuming possible release and subsequent drift of H + species [18].…”

Section: Introductionmentioning

confidence: 99%