Flash memory cells-an overview

Pavan, Paolo; Bez, R.; Olivo, P.; Zanoni, Enrico

doi:10.1109/5.622505

Cited by 623 publications

(331 citation statements)

References 75 publications

(98 reference statements)

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“…Advanced flash memory technology can store more than 1 bit in each flash memory cell, making it possible to increase the memory density further without reducing the cell size. The stored charges are located in the potential well of blocking (or sometimes called control oxide) and tunnelling oxide layers, so the information can be maintained even after the power outage, resulting in nonvolatile memory operations [19][20][21]. This is the major technical advancement that has been made since the invention of flash memory devices using the floating gate.…”

Section: Operations Of Non-volatile Memory Devicesmentioning

confidence: 99%

“…Therefore, tremendous effort has been made toward the development of high-density, low-cost, and nonvolatile solid-state storage devices [17][18][19][20][21][22][23][24][25][26][27][28]. Among the many types of non-volatile memory technology, flash memory devices based on the floating gate have been widely used due to their massive memory capacity, which has been required for many applications [17,[19][20][21]23]. However, floating-gate based flash memory has been reported to have limits in continuous device scaling due to increasing cell-to-cell interference, decreasing coupling ratio, non-scalable tunnelling oxide thickness, decreasing tolerance for charge loss, etc.…”

Section: Introductionmentioning

confidence: 99%

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Recent progress in gold nanoparticle-based non-volatile memory devices

Jang‐Sik

2010

Gold Bull

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Recently, much progress has been made toward the fabrication of non-volatile memory devices based on metallic nanoparticles. Among the many kinds of nanoparticles, gold nanoparticles are some of the most widely used materials for charge trapping elements in non-volatile memory devices because they are chemically stable, easily synthesized, and have a high work function. Various synthesis methods have been applied to fabricate gold nanoparticle-based nonvolatile memory devices and recent progress indicates that gold is a very promising material for non-volatile memory applications. In this article, the recent advances in fabrication and characterization of gold nanoparticle-based nonvolatile memory devices, with an emphasis on flash memory-type memory devices, are reviewed. Detailed device fabrication, characterization, and future directions are reported based on the recent research activities and literature.

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Section: Operations Of Non-volatile Memory Devicesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Recent progress in gold nanoparticle-based non-volatile memory devices

Jang‐Sik

2010

Gold Bull

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“…Whenever a charge Q is stored in the floating gate, simple electrostatics [32] shows that the threshold voltage V T of the cell becomes…”

Section: Array Architecture and Layoutmentioning

confidence: 99%

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

2017

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Abstract:We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field. Particular emphasis is placed on mechanisms developing along the lifetime of the memory array, as opposed to time-zero or technological issues, and the viewpoint is focused on the understanding of the root causes. The impressive amount of published work demonstrates that Flash reliability is a complex yet well-understood field, where nonetheless tighter and tighter constraints are set by device scaling. Three-dimensional NAND have offset the traditional scaling scenario, leading to an improvement in performance and reliability while raising new issues to be dealt with, determined by the newer and more complex cell and array architectures as well as operation modes. A thorough understanding of the complex phenomena involved in the operation and reliability of NAND cells remains vital for the development of future technology nodes.

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“…There are a large number of variations on flash memory devices and programming modes. 36 Among the mechanisms used for writing into storage layers, Hot Electron Injection (HEI) is widely used to speed up write times. In the presented devices, the HEI are insignificant as the size of the device is much greater than the thermalization length of carriers.…”

Section: This Is Indeed the Case As Shown In Figures 2(c) And 2(d)mentioning

confidence: 99%

Memristive behavior in a junctionless flash memory cell

Orak

Ürel

Bakan

et al. 2015

Applied Physics Letters

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We report charge storage based memristive operation of a junctionless thin film flash memory cell when it is operated as a two terminal device by grounding the gate. Unlike memristors based on nanoionics, the presented device mode, which we refer to as the flashristor mode, potentially allows greater control over the memristive properties, allowing rational design. The mode is demonstrated using a depletion type n-channel ZnO transistor grown by atomic layer deposition (ALD), with HfO2 as the tunnel dielectric, Al2O3 as the control dielectric, and non-stoichiometric silicon nitride as the charge storage layer. The device exhibits the pinched hysteresis of a memristor and in the unoptimized device, Roff/Ron ratios of about 3 are presented with low operating voltages below 5 V. A simplified model predicts Roff/Ron ratios can be improved significantly by adjusting the native threshold voltage of the devices. The repeatability of the resistive switching is excellent and devices exhibit 106s retention time, which can, in principle, be improved by engineering the gate stack and storage layer properties. The flashristor mode can find use in analog information processing applications, such as neuromorphic computing, where well-behaving and highly repeatable memristive properties are desirable. © 2015 AIP Publishing LLC

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Flash memory cells-an overview

Cited by 623 publications

References 75 publications

Recent progress in gold nanoparticle-based non-volatile memory devices

Recent progress in gold nanoparticle-based non-volatile memory devices

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

Memristive behavior in a junctionless flash memory cell

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