Homogeneous linewidth broadening in a<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mn>0.5</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>0.5</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">A</mml:mi><mml:mi mathvariant="normal">s</mml:mi><mml:mo>/</mml:mo><mml:mi mathvari

Matsuda, Kazunari; Ikeda, K.; Saiki, Takanao; Tsuchiya, Hiroyuki; Saito, Hideaki; Nishi, Kenichi

doi:10.1103/physrevb.63.121304

Cited by 68 publications

(15 citation statements)

References 24 publications

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“…[4]), we must use γ = 4.9 meV. This value leads to τ = 130 fs, which is in a good agreement with the values of the LO-phonon dephasing times reported [7][8][9].…”

Section: Figuresupporting

confidence: 67%

The effect of the size of self‐assembled individual quantum dots on their PL spectra

Zora

Simserides

Triberis

2008

Phys. Status Solidi (c)

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Based on an analytical expression for the photoluminescence (PL) intensity of individual quantum dots (QDs) in the linear regime, we investigate its dependence upon the size of self‐assembled InGaAs QDs. We prove that decreasing the QD size, the PL‐emission spectrum moves to higher energy, due to the confinement‐induced blue‐shift of the electronic levels and the redshift from the increased Coulomb interaction caused by the compression of the exciton radii. This shift is in agreement with experimental results. Moreover, we show that larger dots provide more intense PL spectra. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…[4]), we must use γ = 4.9 meV. This value leads to τ = 130 fs, which is in a good agreement with the values of the LO-phonon dephasing times reported [7][8][9].…”

Section: Figuresupporting

confidence: 67%

The effect of the size of self‐assembled individual quantum dots on their PL spectra

Zora

Simserides

Triberis

2008

Phys. Status Solidi (c)

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“…That is, there exists an effective ratio that describes how many QDs in the active region actually participate in the lasing. Here, we define the effective ratio through a Gaussian integral whose integration range is assumed to be the homogeneous linewidth of the QDs [12]. The ratio is given by…”

Section: Contributedmentioning

confidence: 99%

Theoretical analysis of modal gain in p‐doped 1.3 μm InAs/GaAs quantum dot lasers

Yang

Cao

et al. 2009

Phys. Status Solidi (c)

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A theoretical study of modal gain in p‐doped 1.3 μm InAs/GaAs quantum dot (QD) lasers is presented. The expression of modal gain is derived, which includes an effective ratio that describes how many QDs contribute to the modal gain. The calculated results indicate that the modal gain with the effective ratio is much smaller than that without the effective ratio. The calculated maximum modal gain is in a good agreement with the experimental data. Furthermore, QDs with lower height or smaller aspect ratio are beneficial in achieving a larger maximum modal gain that leads to lower threshold current density and higher differential modal gain. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Saiki's group used NSOM to investigate the homogeneous linewidth broadening of single InGaAs QD at room temperature with a spatial resolution of 250 nm, which is determined by the aperture diameter of NSOM tip [35]. For the past five years, our group has used NSOM to investigate the physics of self-assembled QDs (SADs) at low temperature.…”

Section: Nanoscale Quantum-dot Spectroscopymentioning

confidence: 99%

“…So to excite just a few dots within a small spectral window, the sample area under investigation must be reduced to a few hundred nanometers in size. To accomplish this, one approach is aperturing or focusing the excitation laser tightly to a spot size of that magnitude [22], [35], [36]. Another approach is creating a mask or etching a mesa on the sample itself [30], [37].…”

Section: Nanoscale Quantum-dot Spectroscopymentioning

confidence: 99%

Immersion lens microscopy of photonic nanostructures and quantum dots

Goldberg

Ippolito

Novotny

et al. 2002

IEEE J. Select. Topics Quantum Electron.

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Abstract-We describe recent experimental and theoretical advances in immersion lens microscopy for both surface and subsurface imaging as applied to photonic nanostructures. We examine in detail the ability of sharp metal tips to enhance local optical fields for nanometer resolution microscopy and spectroscopy. Finally, we describe a new approach to nano-optics, that of combining solid immersion microscopy with tip-enhanced focusing and show how such an approach may lead to 20-nm resolution with unity throughput.

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Homogeneous linewidth broadening in aIn0.5Ga0.5As/

Cited by 68 publications

References 24 publications

The effect of the size of self‐assembled individual quantum dots on their PL spectra

The effect of the size of self‐assembled individual quantum dots on their PL spectra

Theoretical analysis of modal gain in p‐doped 1.3 μm InAs/GaAs quantum dot lasers

Immersion lens microscopy of photonic nanostructures and quantum dots

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