Theoretical analysis of modal gain in p‐doped 1.3 μm InAs/GaAs quantum dot lasers

Ji, Hao; Yang, Tao; Cao, Yulian; Ma, Wenquan; Cao, Qing; Chen, Lianghui

doi:10.1002/pssc.200880664

Cited by 4 publications

(3 citation statements)

References 13 publications

(18 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…33,42,74,75 The variation of modal gain is attributed to the refractive index of the GaAsP barrier, which is inversely proportional to the threshold current. 76,77 Therefore, with GaAsP tensile barriers at 0.145 phosphorus content, low transparency carrier density and high internal efficiency are obtained along with significant improvement in the aging performance of the InGaAs/ GaAsP quantum well lasers. The low transparency current density of the InGaAs/GaAsP quantum well laser devices may reflect a low defect density at the interface between the well and the barrier.…”

Section: Resultsmentioning

confidence: 99%

Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode

Dong

Sun

et al. 2016

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

The growth and strain-compensation behaviour of InGaAs/GaAsP multi-quantum wells, which were fabricated by metal-organic chemical vapor deposition, have been studied towards the application of these quantum wells in high-power laser diodes. The effect of the height of the potential barrier on the confined level of carrier transport was studied by incorporating different levels of phosphorus content into the GaAsP barrier. The crystal quality and interface roughness of the InGaAs/GaAsP multi-quantum wells with different phosphorus contents were evaluated by high resolution X-ray diffraction and in situ optical surface reflectivity measurements during the growth. The surface morphology and roughness were characterized by atomic force microscopy, which indicates the variation law of surface roughness, terrace width and uniformity with increasing phosphorus content, owing to strain accumulation. Moreover, the defect generation and structural disorder of the multi-quantum wells were investigated by Raman spectroscopy. The optical properties of the multi-quantum wells were characterized by photoluminescence, which shows that the spectral intensity increases as the phosphorus content increases. The results suggest that more electrons are well bound in InGaAs because of the high potential barrier. Finally, the mechanism of the effect of the height of the potential barrier on laser performance was proposed on the basis of simulation calculations and experimental results.

show abstract

Section: Resultsmentioning

confidence: 99%

Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode

Dong

Sun

et al. 2016

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

show abstract

“…The addition of p-doping in the active region of QDs could increase the probability of holes occupying the ground state of the valence band, increasing the ground state energy level mode gain. Due to the increase in gain caused by p-doping, the p-doped device with a very short cavity could emit at ground state [18]. Meanwhile, because p-modulated doping provides additional holes for closely spaced valence band levels and increases the occupation of additional valence band states for QDs, the p-doped device shows an enhanced emission linewidth [19].…”

Section: P-i-v Curvesmentioning

confidence: 99%

1.3 μm p-Modulation Doped InGaAs/GaAs Quantum Dot Lasers with High Speed Direct Modulation Rate and Strong Optical Feedback Resistance

MaXueer

et al. 2020

Crystals

Self Cite

View full text Add to dashboard Cite

Aiming to realize high-speed optical transmitters for isolator-free telecommunication systems, 1.3 μm p-modulation doped InGaAs/GaAs quantum dot (QD) lasers with a 400 μm long cavity have been reported. Compared with the un-doped QD laser as a reference, the p-doped QD laser emits at ground state, with an ultra-low threshold current and a high maximum output power. The p-doped QD laser also shows enhanced dynamic characteristics, with a 10 Gb/s large-signal direct modulation rate and a 7.8 GHz 3dB-bandwidth. In addition, the p-doped QD laser exhibits a strong coherent optical feedback resistance, which might be beyond −9 dB.

show abstract

“…where 𝑠 𝑚 is the degeneracy of discrete energy level, 𝑚 denotes a specific optical transition, [10,11] 𝑓 𝑐,𝑚 (𝑇 ) and 𝑓 𝑣,𝑚 (𝑇 ) reflect quasi-equilibrium electron-hole distributions for the corresponding optical transition. The injected current under the threshold can be calculated through the summation of carriers for all levels which contribute to spontaneous emission; therefore it is described in the form…”

mentioning

confidence: 99%

Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 μm InAs/GaAs Quantum-Dot Lasers by Facet Coating Design

Yang

et al. 2011

Chinese Phys. Lett.

Self Cite

View full text Add to dashboard Cite

We demonstrate a technique of temperature compensation for 1.3 µm InAs/GaAs quantum-dot (QD) lasers by facet coating design. The key point of the technique is to make sure that the mirror loss of the lasers decreases as the temperature rises. To realize this, we design a type of facet coating by shifting the central wavelength of the facet coating from 1310 nm to 1480 nm, whose reflectivity increases as the emission wavelength of the lasers red-shifts. Consequently, the laser with the new facet coating exhibits a characteristic temperature doubled in size and a more stable slope efficiency in the temperature range from 10 ∘ C to 70 ∘ C, compared with the traditional one with a temperature-independent mirror loss.

show abstract

Theoretical analysis of modal gain in p‐doped 1.3 μm InAs/GaAs quantum dot lasers

Cited by 4 publications

References 13 publications

Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode

Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode

1.3 μm p-Modulation Doped InGaAs/GaAs Quantum Dot Lasers with High Speed Direct Modulation Rate and Strong Optical Feedback Resistance

Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 μm InAs/GaAs Quantum-Dot Lasers by Facet Coating Design

Contact Info

Product

Resources

About