Homoepitaxy on GaN substrate with various treatments by metalorganic vapor phase epitaxy

Chen, Kuei Ming; Wu, Yung-Hsien; Yeh, Yen Hsien; Chiang, Chen‐Yu; Chen, Kuei You; Lee, Wei-I

doi:10.1016/j.jcrysgro.2010.10.018

Cited by 5 publications

(4 citation statements)

References 23 publications

(24 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…AlGaN/GaN HEMT layers were grown on thick hydride vapor phase epitaxy FS-GaN (0001) substrates from supplier Lumilog-Saint Gobain where the FS-GaN separation from the foreign substrate (sapphire) results in difficulties such as cracks and other defects [18][19][20][21][22][23][24][25][26][27][28]. The surface of the as-grown FS-GaN substrate cannot be directly used for further epitaxial growth unless a smoothing treatment (mechano-chemical polishing in our case) is performed, which, in turn, can cause further surface and subsurface damage [24].…”

Section: Nanoscale Homoepitaxial Mode Of Growth and Morphologymentioning

confidence: 99%

Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor

et al. 2015

View full text Add to dashboard Cite

The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25-310°C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. The low channel sheet resistance and the enhanced heat dissipation allow a highly conductive HEMT transistor (I ds > 1 A mm −1 ) to be defined (0.5 A mm −1 at 300°C). The vertical breakdown voltage has been determined to be ∼850 V with the vertical drain-bulk (or gate-bulk) current following the hopping mechanism, with an activation energy of 350 meV. The conductive atomic force microscopy nanoscale current pattern does not unequivocally follow the molecular beam epitaxy AlGaN/GaN morphology but it suggests that the FS-GaN substrate presents a series of preferential conductive spots (conductive patches). Both the estimated patches density and the apparent random distribution appear to correlate with the edge-pit dislocations observed via cathodoluminescence. The sub-surface edge-pit dislocations originating in the FS-GaN substrate result in barrier height inhomogeneity within the HEMT Schottky gate producing a subthreshold current.S Online supplementary data available from stacks.iop.org/NANO/0/000000/mmedia

show abstract

Section: Nanoscale Homoepitaxial Mode Of Growth and Morphologymentioning

confidence: 99%

Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor

et al. 2015

View full text Add to dashboard Cite

show abstract

“…14 Moreover, HCl (aq), annealing in NH 3 , annealing in vapor HCl, and inductively coupled plasma (ICP) treatment are helpful to promote surface morphology for nucleation of homo-epitaxial GaN. [14][15][16][17] These methods, however, restrict the commercial success of bulk GaN owing to the complicated growth process and the increment of fabrication cost.…”

Section: Introductionmentioning

confidence: 99%

Stress-engineered growth of homoepitaxial GaN crystals using hydride vapor phase epitaxy

Lee

2018

RSC Adv.

View full text Add to dashboard Cite

show abstract

“…[15] Actually, the growth on the thick GaN template is reported much less than that on the GaN substrate. Besides, growth surface treatment to eliminate the interface between HVPE-GaN and MOCVD-GaN [17,18] and optimization of growth condition to inherit the low TDD and residual strain of HVPE-GaN [19,20] for GaN substrates are also essential to regrowth on the thick GaN template.…”

Section: Introductionmentioning

confidence: 99%

Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template

Li¹,

Tao²,

Chen³

et al. 2014

Chinese Phys. B

View full text Add to dashboard Cite

The high power GaN-based blue light emitting diode (LED) on an 80-µm-thick GaN template is proposed and even realized by several technical methods like metal organic chemical vapor deposition (MOCVD), hydride vapor-phase epitaxial (HVPE), and laser lift-off (LLO). Its advantages are demonstrated from material quality and chip processing. It is investigated by high resolution X-ray diffraction (XRD), high resolution transmission electron microscope (HRTEM), Rutherford back-scattering (RBS), photoluminescence, current-voltage and light output-current measurements. The width of (0002) reflection in XRD rocking curve, which reaches 173 for the thick GaN template LED, is less than that for the conventional one, which reaches 258 . The HRTEM images show that the multiple quantum wells (MQWs) in 80-µmthick GaN template LED have a generally higher crystal quality. The light output at 350 mA from the thick GaN template LED is doubled compared to traditional LEDs and the forward bias is also substantially reduced. The high performance of 80-µm-thick GaN template LED depends on the high crystal quality. However, although the intensity of MQWs emission in PL spectra is doubled, both the wavelength and the width of the emission from thick GaN template LED are increased. This is due to the strain relaxation on the surface of 80-µm-thick GaN template, which changes the strain in InGaN QWs and leads to InGaN phase separation.

show abstract

Homoepitaxy on GaN substrate with various treatments by metalorganic vapor phase epitaxy

Cited by 5 publications

References 23 publications

Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor

Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor

Stress-engineered growth of homoepitaxial GaN crystals using hydride vapor phase epitaxy

Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template

Contact Info

Product

Resources

About