Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor

Abstract

The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25-310°C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. The low channel sheet resistance and the enhanced heat dissipation allow a highly conductive HEMT transistor (I ds > 1 A mm −1 ) to be defined (0.5 A mm −1 at 300°C). The vertical breakdown voltage has been determined to be ∼850 V with the vertical drain-bulk (or gate-bulk) current following the hopping mechanism, with an activation energy of 350 meV. The conductive atomic force microscopy nanoscale current pattern does not unequivocally follow the molecular beam epitaxy AlGaN/GaN morphology but it suggests that the FS-GaN substrate presents a series of preferential conductive spots (conductive patches). Both the estimated patches density and the apparent random distribution appear to correlate with the edge-pit dislocations observed via cathodoluminescence. The sub-surface edge-pit dislocations originating in the FS-GaN substrate result in barrier height inhomogeneity within the HEMT Schottky gate producing a subthreshold current.S Online supplementary data available from stacks.iop.org/NANO/0/000000/mmedia

Ru-decorated gallium nitride nanotubes as chemical sensor for detection of purinethol drug: a density functional theory study

“…Despite much researches on inorganic nanotubes, very few experiments have been performed on GaN nanotubes (GaNNT) as sensors. In group III-nitrides, GaN has been extensively studied experimentally and theoretically due to their diverse application in electronic devices, such as quantum-point lasers, LEDs, optoelectronics, transistors, and others [44][45][46][47][48]. Liu et al have reported that GaN catalyzes the direct hydrogenation of CO 2 to dimethyl ether with a CO-free selectivity of about 80% [49].…”