Homoepitaxial diamond growth by high-power microwave-plasma chemical vapor deposition

Boron inhomogeneity of HPHT-grown single-crystal diamond substrates: Confocal micro-Raman mapping investigations

“…11 Since the development of diamond homoepitaxial CVD using high-density plasma, the creation of non-epitaxial crystallites on the (100) substrate has been almost entirely suppressed. 12,13 Nevertheless, vSBDs formed on such homoepitaxial diamond without non-epitaxial crystallites still show large reverse current, which does not follow any leakage current mechanism. This suggests the presence of killer defects other than non-epitaxial crystallites.…”

Effect of steps on dislocations in CVD diamond grown on {001} substrates

“…Controlling impurity concentrations is very difficult in HPHT synthesis but CVD can be used to produce diamond material of high purity or with controlled doping [1][2][3][4][5][6][7]. For this reason, CVD diamond has potential applications in electronics which are not open to HPHT-grown diamond.…”

High rate growth of thick diamond films by high-current hot-cathode PCVD

“…The curve was obtained at the highest carbon concentration condition (i.e., CH 4 that the deposition rate only changes slightly with the change of the discharge current. Previous study results relating to the deposition rate of diamond films in various CVD processes showed us that the most important factor influencing the deposition rate was the concentration of carbon-containing gas in the resource gases [11][12][13][14]. In our deposition process, we could get an even higher deposition rate by increasing the flowrate of CH 4 and/or alcohol.…”