Boron inhomogeneity of HPHT-grown single-crystal diamond substrates: Confocal micro-Raman mapping investigations

Srimongkon, Kridsanapan; Ohmagari, Shinya; Kato, Y.; Amornkitbamrung, Vittaya; Shikata, Shinichi

doi:10.1016/j.diamond.2015.09.014

Cited by 32 publications

(17 citation statements)

References 25 publications

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“…Data taken from 18 electrodes (diodes in group A and B) are shown in this figure. The values of EPD were 6.8 × 10 4 –3.0 × 10 5 cm −2 , which is comparable to the dislocation density of the similar type of the heavily boron‐doped diamond substrate reported using XRT . Results suggest that most of etch pits observed in this study originate from dislocation in the substrate.…”

Section: Resultssupporting

confidence: 86%

“…In contrast to these results, in our study, flat‐bottom etch pits appeared at apparently random locations. The density of flat‐bottom etch pits is on the order of 10 5 cm −2 , which is comparable to the dislocation density of a similar substrate reported using XRT . The flat‐bottom etch pits are thought to be dislocations propagated from the substrate.…”

Section: Resultssupporting

confidence: 72%

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Detection of Defects in Diamond by Etch‐Pit Formation

Shimaoka

Ichikawa

Koizumi

et al. 2019

Physica Status Solidi (a)

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Correlation between the reverse current density J R of diamond vertical Schottky barrier diodes (SBD) and the shape of the etch pits is investigated. Etch pits form throughout the whole epitaxial layer area with a density of 6.8 Â 10 4 -3.0 Â 10 5 cm À2 . Most etch pits are isolated-type, with flat-bottom or point-bottom shape. A typical pit size is 3-5 μm in width and 1-3 μm in depth. Some etch pits aggregate linearly with a size of >10 μm. The SBDs show large J R when these etch pit clusters appear. The etch pit cluster density is <10 3 cm À2 .

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Section: Resultssupporting

confidence: 86%

Section: Resultssupporting

confidence: 72%

Detection of Defects in Diamond by Etch‐Pit Formation

Shimaoka

Ichikawa

Koizumi

et al. 2019

Physica Status Solidi (a)

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“…Green band luminescence is a characteristic feature of heavily boron‐doped sample . In fact, this band luminescence was observed from the substrate before homoepitaxial growth, as shown in the Figure .…”

Section: Resultsmentioning

confidence: 92%

“…The luminescence was extended into the [100] or [010] direction. This luminescence reportedly originated from stacking faults in the heavily boron‐doped substrate . A growth sector indicated by arrows, showed a darker image, suggesting less boron impurity than other portions of the substrate.…”

Section: Resultsmentioning

confidence: 98%

Characteristic Luminescence Correlated with Leaky Diamond Schottky Barrier Diodes

Shimaoka

Teraji

Watanabe

et al. 2017

Physica Status Solidi (a)

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This paper reports correlation between reverse current (I R ) of diamond Schottky barrier diodes (SBDs) and luminescence feature. p-Type vertical SBDs were characterized by current-voltage and cathodoluminescence (CL) measurements. From an exciton image taken at the electrode deposited area, non-luminescence spots with number density of 10 4 -10 5 cm À2 were confirmed. No marked relation was found between the density of non-luminescence spots and I R . A larger I R of >10 À5 A was observed when an electrode was deposited on an area that showed bright Band-A luminescence spots in the CL image. In addition, diodes on the belt-shaped luminescence in the Green-band image showed large I R .

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“…However, the existence of defects located in diamond substrates leads to a reduction in the material properties. Defects in diamond include point defects [9], stacking faults (SFs) [10], and threading dislocations (TDs) [11]. Point defects are mainly contained in nitrogen-vacancy centers (NV 0 , NV − ) [12], silicon vacancy centers (SiV − ) [13], and hydrogen-related defects [14].…”

Section: Introductionmentioning

confidence: 99%

Reducing Threading Dislocations of Single-Crystal Diamond via In Situ Tungsten Incorporation

et al. 2022

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A lower dislocation density substrate is essential for realizing high performance in single-crystal diamond electronic devices. The in-situ tungsten-incorporated homoepitaxial diamond by introducing tungsten hexacarbonyl has been proposed. A 3 × 3 × 0.5 mm3 high-pressure, high-temperature (001) diamond substrate was cut into four pieces with controlled experiments. The deposition of tungsten-incorporated diamond changed the atomic arrangement of the original diamond defects so that the propagation of internal dislocations could be inhibited. The SEM images showed that the etching pits density was significantly decreased from 2.8 × 105 cm−2 to 2.5 × 103 cm−2. The reduction of XRD and Raman spectroscopy FWHM proved that the double-layer tungsten-incorporated diamond has a significant effect on improving the crystal quality of diamond bulk. These results show the evident impact of in situ tungsten-incorporated growth on improving crystal quality and inhibiting the dislocations propagation of homoepitaxial diamond, which is of importance for high-quality diamond growth.

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Boron inhomogeneity of HPHT-grown single-crystal diamond substrates: Confocal micro-Raman mapping investigations

Cited by 32 publications

References 25 publications

Detection of Defects in Diamond by Etch‐Pit Formation

Detection of Defects in Diamond by Etch‐Pit Formation

Characteristic Luminescence Correlated with Leaky Diamond Schottky Barrier Diodes

Reducing Threading Dislocations of Single-Crystal Diamond via In Situ Tungsten Incorporation

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