Detection of Defects in Diamond by Etch‐Pit Formation

Shimaoka, Takehiro; Ichikawa, Kimiyoshi; Koizumi, Satoshi; Watanabe, Kenji; Teraji, Tokuyuki

doi:10.1002/pssa.201900247

Cited by 8 publications

(3 citation statements)

References 31 publications

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“…Shimaoka et al recently reported that aggregated dislocation clusters, not isolated dislocations, are possible killer defects inducing large I leak . 17) The large leakage current was observed irrespective of the position of growth sectors originating from HPHT-grown crystals. The influence of growth sector boundaries for device properties has not been clarified in the present investigation.…”

Section: Resultsmentioning

confidence: 90%

“…12,13) One of the primary concerns limiting capability is the presence of killer defects which induce Ohmic-like leakage at relatively low reverse voltage. 14,15) The presence of dislocations or dislocation bundles, 16,17) B complex, 18,19) and B aggregation are considered possible causes of such leaky diodes. Suppression of these killer defects is a key issue in enhancing high-current operation with large Schottky contacts.…”

Section: Introductionmentioning

confidence: 99%

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Suppression of killer defects in diamond vertical-type Schottky barrier diodes

Kobayashi

Ohmagari

Umezawa

et al. 2020

Jpn. J. Appl. Phys.

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Vertical architectures in diamond Schottky barrier diodes (VSBDs) are favorable for realizing high-current operation. However, a major obstacle affecting performance is the presence of killer defects which are thought to originate from heavily B-doped p+ substrates. Here, we introduced a buffer layer to suppress the extended defects from p+ substrate to epitaxial layer, called metal-assisted termination. Significant reduction of band-A luminescence in cathodoluminescence spectra was confirmed, indicating a large improvement in crystallinity. VSBDs showed highly uniform rectifying actions with suppressed leakage currents. The electric field strength was increased from 1.9 to 5.0 MV cm −1 when a buffer layer was inserted. © 2020 The Japan Society of Applied Physics 12 μm and 350 μm, respectively. Current-voltage (I-V ) characteristics were assessed at room temperature using a semiconductor parameter analyzer (Agilent Technologies,

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Section: Resultsmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Suppression of killer defects in diamond vertical-type Schottky barrier diodes

Kobayashi

Ohmagari

Umezawa

et al. 2020

Jpn. J. Appl. Phys.

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“…[ 8 ] On the other hand, some dislocations may extend from the p‐type substrate to the n‐type diamond layer, resulting in extra leakage paths. [ 9 ] In addition, some nonepitaxial crystallites defects [ 10 ] or impurities in the intrinsic layer also can induce shunt conduction paths for reverse current leakage. Figure 2b shows a representative result of C – V measurements at room temperature with a frequency of 10 kHz.…”

Section: Resultsmentioning

confidence: 99%

Fabrication and Characterization of (100)‐Oriented Single‐Crystal Diamond p–i–n Junction Ultraviolet Detector

Liu

Lin

Zhao

et al. 2020

Physica Status Solidi (a)

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A (001)‐oriented single‐crystal diamond p–i–n junction ultraviolet (UV) detector is fabricated and its optoelectronic properties are investigated. The detector exhibits a clear rectifying I–V characteristic with a rectification ratio of 223 at ±5 V. At a reverse bias of 5 V, the responsivity is 1.69 A W−1 under an irradiation of 210 nm light, and the 210 nm/400 nm UV‐to‐visible rejection ratio reaches 103. The time response characteristic shows a long rise time and decay time, which are mainly caused by the carrier trapping in the n‐type diamond layer.

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