Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures

Irisawa, Toshifumi; Myronov, Maksym; Mironov, O. A.; Parker, E. H. C.; Nakagawa, Kiyokazu; Murata, Masaki; Koh, Shinji; Shiraki, Y.

doi:10.1063/1.1558895

Cited by 47 publications

(39 citation statements)

References 11 publications

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“…At p = 7.7 × 10 10 cm −2 , ν = 6 at B ∼ 0.53 T is barely resolvable, while ν = 5, 7, and 9 can still be clearly distinguished. This behavior is quite different from what is observed in other Ge 2D hole systems, typically with a much higher hole density [10,19].…”

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confidence: 44%

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Effective g factor of low-density two-dimensional holes in a Ge quantum well

Harris

Huang

et al. 2017

Applied Physics Letters

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“…Both m * and g * derive from the bulk band structure and quantum confinement, with their values being heavily influenced by carrier interactions. For Ge 2D holes, most measurements yield m * ∼ 0.07 − 0.1 m 0 , where m 0 is the free electron mass [8,[10][11][12][13][14]. However, g * for Ge 2D holes has not been studied extensively.…”

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Effective g factor of low-density two-dimensional holes in a Ge quantum well

Harris

Huang

et al. 2017

Applied Physics Letters

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“…The effective mass of the holes is determined from the temperature dependence of the Shubnikov-de Haas oscillation. The effective mass increases with the hole concentration and this is due to the nonparabolicity of the valence band [25,26].…”

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Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Strained-Ge/SiGeQuantum Well

et al. 2014

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The spin-orbit interaction (SOI) of a two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge=SiGe quantum well structure. We observe weak antilocalization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrate electric field control of the Rashba SOI. Our findings reveal that the heavy hole (HH) in strained Ge is a purely cubic Rashba system, which is consistent with the spin angular momentum m j ¼ AE3=2 nature of the HH wave function. DOI: 10.1103/PhysRevLett.113.086601 PACS numbers: 72.25.Dc, 73.20.Fz, 73.21.-b The spin-orbit interaction (SOI) in a two-dimensional system is a subject of considerable interest because the SOI induces spin splitting at a zero magnetic field, which is important in both fundamental research and electronic device applications [1]. Recent developments of SOI-induced phenomena in the solid state demonstrate many possibilities utilizing spin current and the emergence of new physics such as the spin interferometer [2,3], persistent spin helix [4,5], spin Hall effect [6][7][8], and quantum spin Hall effect [9,10]. Up to now, there have been two well-known SOIs existing in solids: the Dresselhaus SOI [11] due to bulk inversion asymmetry (BIA) in the crystal structure and the Rashba SOI [12,13] due to spatial inversion asymmetry (SIA).In low-dimensional systems, the Rashba SOI becomes more important because it is stronger at the heterointerface and can be controlled by an external electric field. Many of the pioneering studies on the SOI-induced phenomena mentioned above were performed in two-dimensional electron systems, where the Rashba SOI is described by the k-linear Rashba term. In the Hamiltonian, the k-linear Rashba term can be written aswhere σ AE ¼ 1=2ðσ x AE iσ y Þ denote combinations of Pauli spin matrices, k AE ¼ k x AE ik y , and k x , k y are the components of the in-plane wave vector k ∥ . The effective magnetic field Ω 1 ðk ∥ Þ acting on the transport carrier due to the k-linear Rashba term is illustrated in Fig. 1(a).Recently, a higher-order contribution of the Rashba SOI, the so-called k 3 (k-cubic) Rashba SOI, has received more attention [14,15]. The Hamiltonian for the k-cubic Rashba SOI is expressed asand the effective magnetic field Ω 3 ðk ∥ Þ in k space is illustrated in Fig. 1(b) [15]. There is a significant difference in the effective field symmetry between the k-linear and the k-cubic Rashba SOI with one and three rotations in k space, respectively. The k 3 symmetry of the SOI is an interesting subject because it influences all of the SOI-induced phenomena as opposed to the k-linear Rashba term. For example, in case of the spin Hall effect, the k-cubic Rashba term is predicted to give rise to a larger spin Hall conductivity [17][18][19].

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“…[7][8][9][10] For example, Miura et al studied quantum transport in a compressively strained Ge QW with a 2DHG mobility of 23 800 cm 2 /Vs and a carrier density of 2.4 Â 10 12 cm À2 . 11 Prior to the recent report of hole mobility in excess of 1 Â 10 6 cm 2 /Vs at a carrier density of 2.9 Â 10 11 cm À2 in a Ge QW, 1 the record value of mobility was 120 000 cm 2 /Vs with a carrier density of 8.5 Â 10 11 cm À2 .…”

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Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

Morrison

Casteleiro

Leadley

et al. 2016

Applied Physics Letters

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Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures

Abstract: Tokyo, Hongo, Japan ͑Received 25 November 2002; accepted 13 January 2003͒We performed systematic low-temperature (Tϭ350 mK-15 K͒ magnetotransport measurements on the two-dimensional hole gas with various sheet carrier densities P s ϭ(0.57-2.1)ϫ1012 cm

Cited by 47 publications

References 11 publications

Effective g factor of low-density two-dimensional holes in a Ge quantum well

Effective g factor of low-density two-dimensional holes in a Ge quantum well

Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Strained-Ge/SiGeQuantum Well

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

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