We report the magneto-transport, scattering mechanisms, and effective mass analysis of an ultra-low density two-dimensional hole gas capacitively induced in an undoped strained Ge/Si0.2Ge0.8 heterostructure. This fabrication technique allows hole densities as low as p ∼ 1.1 × 1010 cm−2 to be achieved, more than one order of magnitude lower than previously reported in doped Ge/SiGe heterostructures. The power-law exponent of the electron mobility versus density curve, μ ∝ nα, is found to be α ∼ 0.29 over most of the density range, implying that background impurity scattering is the dominant scattering mechanism at intermediate densities in such devices. A charge migration model is used to explain the mobility decrease at the highest achievable densities. The hole effective mass is deduced from the temperature dependence of Shubnikov-de Haas oscillations. At p ∼ 1.0 × 1011 cm−2, the effective mass m* is ∼0.105 m0, which is significantly larger than masses obtained from modulation-doped Ge/SiGe two-dimensional hole gases.

Intensive energy demand urges state-of-the-art rechargeable batteries. Rechargeable aluminum-ion batteries (AIBs) are promising candidates with suitable cathode materials. Owing to high abundance of carbon, hydrogen, and oxygen and rich chemistry of organics (structural diversity and flexibility), small organic molecules are good choices as the electrode materials for AIB. Herein, a series of small-molecule quinone derivatives (SMQD) as cathode materials for AIB were investigated. Nonetheless, dissolution of small organic molecules into liquid electrolytes remains a fundamental challenge. To nullify the dissolution problem effectively, 1,4-benzoquinone was integrated with four bulky phthalimide groups to form 2,3,5,6-tetraphthalimido-1,4-benzoquinone (TPB) as the cathode materials and assembled to be the AI/TPB cell. As a result, the Al/TPB cell delivered capacity as high as 175 mA h/g over 250 cycles in the urea electrolyte system. Theoretical studies have also been carried out to reveal and understand the storage mechanism of the TPB electrode.

Using ultra-high quality SiGe/Si/SiGe quantum wells at millikelvin temperatures, we experimentally compare the energy-averaged effective mass, m, with that at the Fermi level, m F, and verify that the behaviours of these measured values are qualitatively different. With decreasing electron density (or increasing interaction strength), the mass at the Fermi level monotonically increases in the entire range of electron densities, while the energy-averaged mass saturates at low densities. The qualitatively different behaviour reveals a precursor to the interaction-induced single-particle spectrum flattening at the Fermi level in this electron system.

The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments on lower-mobility samples, in ultra-high mobility SiGe/Si/SiGe quantum wells the critical electron density, nc, of the MIT becomes smaller than the density, nm, where the effective mass at the Fermi level tends to diverge. Near the topological phase transition expected at nm, the metallic temperature dependence of the resistance should be strengthened, which is consistent with the experimental observation of more than an order of magnitude resistance drop with decreasing temperature below ∼ 1 K.