An extremely high room temperature two-dimensional hole gas (2DHG) drift mobility of 4230 cm 2 V %1 s %1 in a compressively strained Ge quantum well (QW) heterostructure grown by an industrial type RP-CVD technique on a Si(001) substrate is reported. The low-temperature Hall mobility and carrier density of this structure, measured at 333 mK, are 777000 cm 2 V %1 s %1 and 1.9 ' 10 11 cm %2 , respectively. These hole mobilities are the highest not only among the group-IV Si based semiconductors, but also among p-type III-V and II-VI ones. The obtained room temperature mobility is substantially higher than those reported so far for the Ge QW heterostructures and reveals a huge potential for further application of strained Ge QW in a wide variety of electronic and spintronic devices.
The electrical properties of ZnO thin films grown by pulsed laser deposition were studied. Field-effect devices with a mobility reaching 1 cm 2 /V s show non-linearities both in the current-voltage and in the transfer characteristics which are explained as due to the presence of trap states. These traps cause a reversible threshold voltage shift as revealed by low-frequency capacitance-voltage measurements in metal insulator semiconductor (MIS) capacitors. Thermal detrapping experiments in heterojunctions confirm the presence of a trap state located at 0.32 eV.
Maksym. (2016) Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas. Applied Physics Letters, 109 (10). 102103.
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