Hole confinement effects on multiple Si δ doping in GaAs

Abstract

Articles you may be interested inEffect of quantum confinement on shallow acceptor transitions in δ-doped GaAs/AlAs multiple-quantum wells Appl. Phys. Lett. 84, 735 (2004); 10.1063/1.1644912Effect of quantum-well confinement on acceptor state lifetime in δ-doped GaAs/AlAs multiple quantum wells Appl.

Spatially direct recombinations observed in multiple δ-doped GaAs layers

“…The theoretical model adopted by us has been currently applied to carry out SCF calculations of Mδ-D structures in Si [4] and GaAs [5]. The miniband transition energies and the theoretical cut-off energies were estimated using the following expressions [9]:…”

“…In spite of the already existent experimental data on Mδ-D GaAs structures, there is to date no detailed information about the electronic structure of such systems as derived from, for example, photoluminescence (PL) spectra [1]. Concerning PL measurements, while features attributed to confined states have been observed in the spectra of samples with widely spaced doping layers, broad structureless emission spectra have been reported for samples with closely spaced doping layers [6][7][8][9]. However, until now the correlation between the observed line width of the PL spectra and calculated miniband structure has not been clearly established.…”

Electronic subband of single Siδ-doped GaAs structures

“…Profiles with full widths at half maximum (FWHM) of 30 and 20 Å, determined by capacitance voltage, have been reported for Si-and Be-doped structures, respectively [3,4]. Due to this property of localizing impurities in space, planar doping is used in devices to give rise to quantum confinement of carriers [5,6]. A single and multiple δ-doping has been studied theoretically by several authors using different approximations [7][8][9][10].…”

Ab initio study of thermoelectric properties of doped SnO2 superlattices

“…Moreover, Zn and Sb planar (or delta)-doping layers in SnO 2 , forming doped oxide SL configurations [32][33][34] were also investigated. The transport properties and their temperature and carriers concentration dependence are obtained within the Boltzmann transport equations (BTE) using the calculated ab initio band structure.…”