Electronic subband of single Siδ-doped GaAs structures

Öztürk, Emine; Ergün, Y.; Sarı, H.; Sökmen, I.

doi:10.1006/spmi.2000.0848

Cited by 23 publications

(12 citation statements)

References 12 publications

(10 reference statements)

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“…[3][4][5][6][7][8][9][10][11][12] A typical ␦-doped semiconductor contains a sheet of impurity atoms located within a few atomic layers of crystal and thus the doping profile along the growth direction, z, can be described by the Dirac ␦ function, 13 i.e., N d (z)ϭN d 2D ␦(z), where N d 2D is the two-dimensional ͑2D͒ donor concentration. This profile neglects the random distribution of donors in the doped layer, which is valid in the high-density limit.…”

Section: Introductionmentioning

confidence: 99%

Si δ-doped GaAs structure with different dopant distribution models

Öztürk

Ergün

Sarı

et al. 2002

Journal of Applied Physics

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We have theoretically investigated the diffusion of donor impurities of single Si δ-doped GaAs inserted into a quantum well at T=0 K. The spread of the impurities is taken into account in three different models: (i) a uniform distribution, (ii) a triangular distribution and (iii) a nonuniform distribution. In this article, the nonuniform distribution is different from the Gaussian distribution used by other authors. The electronic structures were calculated by solving the Schrödinger and Poisson equations self-consistently. We also found the confining potential, the charge density, the subband energies, the subband occupations and the Fermi energy. In this study, we have seen that the electronic structures are quite sensitive to the type of donor distribution when the thickness of the donor distribution (Δz) is large.

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Section: Introductionmentioning

confidence: 99%

Si δ-doped GaAs structure with different dopant distribution models

Öztürk

Ergün

Sarı

et al. 2002

Journal of Applied Physics

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“…The δ-doped semiconductor structures have recently attracted much attention because of its potential technological applications in electronic and photonic devices [1,2], and as a source of basic research [3][4][5][6][7][8][9][10][11][12][13]. Epitaxial-growth techniques such as molecular beam epitaxy (MBE) are currently used to prepare δ-doped semiconductor structures, employing narrow and sharp doping profiles to generate V-shaped potential profiles where the carriers are confined.…”

Section: Introductionmentioning

confidence: 99%

Electronic properties of two coupled Siδ-doped GaAs structures

et al. 2002

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We have theoretically investigated the subband structure of two coupled Si δ-doped GaAs at T = 0 K. For the uniform distribution we have studied the influence of the separation between the two doping layers. The electronic properties such as the effective potential, the density profile, the subband energies, the subband populations and Fermi energy have been calculated by solving Schrödinger and Poisson equations self-consistently. In this study, we have seen that the subband structure is quite sensitive to the separation between the two doping layers. We conclude that, if the coupling between two δdoped GaAs layers is significant, the mobility of electrons in this structure is very high compared to single δ-doped structures because of the strong overlap between the electrons and the ionized donors in single δ-doped structures. PACS. 73.90.+f Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures

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“…The most widely used dopant atoms in GaAs are silicon and beryllium, which act as n-type and p-type dopant, respectively. The δ-doping technique has been used widely to introduce carrier-confinement effects [4][5][6][7][8][9][10]. Due to this property of localizing impurities in space, δ-doping is used in devices to give rise to quantum confinement of carriers [11,12].…”

Section: Introductionmentioning

confidence: 99%

“…In this work, nonuniform distribution is different from Gaussian distribution used by Ben Jazia et al [9] and other authors. The effect of diffusion of donor impurities along the growth direction has been compared in [10] for both a uniform distribution and a nonuniform distribution.…”

Section: Introductionmentioning

confidence: 99%

Influence of temperature on the electronic properties of Siδ-doped GaAs structures

et al. 2002

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We have investigated theoretically the electronic structure of Si δ-doped GaAs layers at T = 0 K and at room temperature. For a nonuniform distribution, we have studied their sensitivity to the donor concentration and the donor thickness. In this study, nonuniform distribution is different from Gaussian distribution used by other authors. From the self-consistent calculation, we have seen that at room temperature carriers which appear due to the impurity atoms are more efficient than temperature on the subband structure. PACS. 73.90.+f Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures

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Electronic subband of single Siδ-doped GaAs structures

Cited by 23 publications

References 12 publications

Si δ-doped GaAs structure with different dopant distribution models

Si δ-doped GaAs structure with different dopant distribution models

Electronic properties of two coupled Siδ-doped GaAs structures

Influence of temperature on the electronic properties of Siδ-doped GaAs structures

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