Spatially direct recombinations observed in multiple δ-doped GaAs layers

Levine, A.; Silva, E. C. F. da; Scolfaro, L. M. R.; Beliaev, D.; Quivy, A. A.; Enderlein, R.; Leite, J. R.

doi:10.1006/spmi.1996.9992

Cited by 1 publication

(1 citation statement)

References 8 publications

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“…The renormalized band gap E g * presenting the fundamental band-gap shrinkage originated from many-body effects was taken into account by assuming a quasi-three-dimensional electron gas. 24,25 According to Ref. 26, in the doped GaAs/AlAs SLs one can distinguish three longitudinal modes caused by the coupling of free carriers with optical phonons: that of the lowfrequency acousticlike L Ϫ coupled mode and two of highfrequency opticlike L 1 ϩ ͑GaAs-like͒ and L 2 ϩ ͑AlAs-like͒ coupled modes.…”

Section: ͑7͒mentioning

confidence: 99%

Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures

Pusep

Silva

Galzerani

et al. 2000

Journal of Applied Physics

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Raman scattering was applied to a study of collective plasmon-LO phonon excitations polarized normal to the layers in strongly coupled GaAs/AlAs and ␦-doped GaAs superlattices. Thus, the corresponding ͑vertical͒ motion of electrons and their localization were studied and compared in both types of superlattices. The localization of the collective excitations caused by the localization of the electrons at the top of the miniband was found in the GaAs/AlAs superlattices. Much stronger localization effects were observed in the ␦-doped structures than in the GaAs/AlAs superlattices. Our results reveal evidence of the formation of a miniband structure in the ␦-doped structures even in the case of complete localization of electrons inside one period.

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Section: ͑7͒mentioning

confidence: 99%