HiSIM-IGBT: A Compact Si-IGBT Model for Power Electronic Circuit Design

Miyake, M.; Navarro, D.; Feldmann, U.; Mattausch, Hans Jürgen; Kojima, Takahiro; Ogawa, Teru; Ueta, Takashi

doi:10.1109/ted.2012.2226181

Cited by 24 publications

(16 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The parameter b, which appears in the equation (21), can have the value b = 0 for the source end of the channel and b = 1 for the drain end of the channel (in accordance with the equations (9) and (10)). However, the main problem in modelling of trapped charges with (21) is the fact that the distribution of surface potential in the channel depends not only on gate voltage, but also on drain voltage V DS due to split of quasi Fermi levels [19].…”

Section: Inclusion Of N Ox and D It In Nqs Mos And Nqs Soi Modelsmentioning

confidence: 64%

See 1 more Smart Citation

Spice modeling of ionizing radiation effects in CMOS devices

Pesic-Brdjanin

2017

FACTA U EE

View full text Add to dashboard Cite

Electric characteristics of devices in advanced CMOS technologies change over the time because of the impact of the ionizing radiation effects. Device aging is caused by cumulative contribution of generation of defects in the gate oxide and/or at the interface silicon-oxide. The concentration of these defects is time and bias-dependent values. Existing models include these effects through constant shift of voltage threshold. A method for including ionizing radiation effects in Spice models of MOS transistor and FinFET, based on an auxiliary diode circuit using for derivation of values of surface potential, that also calculates the correction time-dependent voltage due to concentration of trapped charges, is shown in this paper.

show abstract

Section: Inclusion Of N Ox and D It In Nqs Mos And Nqs Soi Modelsmentioning

confidence: 64%

“…Unlike some known models [20][21][22], in the NQS MOS model there are no analytical expressions for node currents, but they are obtained after the solution of equivalent circuit shown on Fig. 3(a).…”

Section: Nqs Mos Transistor Modelmentioning

confidence: 99%

Spice modeling of ionizing radiation effects in CMOS devices

Pesic-Brdjanin

2017

FACTA U EE

View full text Add to dashboard Cite

show abstract

“…Then, the second step is using the user-friendly Graphical User Interface (GUI) software MBPI (Model Based Parameter Identifier) presented in [21] to do the optimization of parameters extracted in the first step. Through the optimization, the performance of the physical model will be further improved.…”

Section: B Parameter Extractionmentioning

confidence: 99%

A Lumped-Charge Approach Based Physical SPICE-Model for High Power Soft-Punch Through IGBT

Duan

Xiao

Luo

et al. 2019

IEEE J. Emerg. Sel. Topics Power Electron.

View full text Add to dashboard Cite

show abstract

“…Lauritzen and Ma introduced another modeling technique called lumped charge [41], which was applied to IGBT modules in [42], and offers an access to on-state voltage simulation realized into the SPICE modeling platform [43]. In [44,45], the model of the IGBT module based on physical structure is constructed as a combination of a metal-oxide-semiconductor field-effect transistor (MOSFET) part and a bipolar junction transistor (BJT) part. It not only provides an on-state voltage measurement method, but also describes the transient characteristic in detail.…”

Section: Introductionmentioning

confidence: 99%

A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms

Kong

Ouyang

et al. 2019

Energies

View full text Add to dashboard Cite

The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and conduction mechanism of the IGBT module, this paper models the on-state voltage and gives a detailed method for extracting the on-state voltage. Experiments not only demonstrate the feasibility of the on-state voltage separation method but also suggest a method for measuring and extracting the model parameters. Furthermore, on-state voltage measurements and simulation results certified the accuracy of this method.

show abstract

HiSIM-IGBT: A Compact Si-IGBT Model for Power Electronic Circuit Design

Cited by 24 publications

References 15 publications

Spice modeling of ionizing radiation effects in CMOS devices

Spice modeling of ionizing radiation effects in CMOS devices

A Lumped-Charge Approach Based Physical SPICE-Model for High Power Soft-Punch Through IGBT

A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms

Contact Info

Product

Resources

About