Highly Uniform Electroluminescence from 150 and 200 mm GaN-on-Si-Based Blue Light-Emitting Diode Wafers

Pinos, Andrea; Tan, W. S.; Chitnis, A.; Nishikawa, Atsushi; Groh, Lars; Hu, Cheng-Yu; Murad, S. K.; Lutgen, S.

doi:10.7567/apex.6.095502

Cited by 8 publications

(6 citation statements)

References 12 publications

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“…More interestingly, the emission efficiency of the white LED emitter, which was fabricated from the epi-wafer of InGaN-based LEDs on a Si substrate, was successfully increased to 110 lm/W. To the best of the authors' knowledge, this white LEDs emitter with InGaNbased LEDs on a Si substrate is the first to reach an efficiency of 110 lm/W [37]- [41]. We believe that the efficiency of InGaN-based LEDs on Si substrate can be further increased by improving the technique of epitaxial growth and the chip process.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, many other growth techniques have been used; they include a GaN-free buffer layer [24], [25], a strained layer of AlN/GaN superlattices (SLs) [26], a single AlN buffer layer or multiple layers of AlN/GaN [27]- [29], an AlGaN buffer layer with an Al gradient [30], a patterned Si substrate [31], [32], selective growth [33], [34], a porous Si substrate [35], and Si on an insulator as a compliant substrate [36]. Although the successful growth of crack-free and highquality GaN epilayer on Si has been reported, the white-light LEDs performance of InGaN-based LEDs on Si remains very poor and no major breakthrough in their emission efficiency or light output power has been made [37]- [41].…”

Section: Introductionmentioning

confidence: 99%

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High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers

Lee

Lin

et al. 2014

IEEE J. Quantum Electron.

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In this paper, a composite buffer layer structure (CBLS) with multiple AlGaN layers and grading of Al composition/u-GaN1/(AlN/GaN) superlattices/u-GaN2 and InAlGaN/AlGaN quaternary superlattices electron-blocking layers (QSLs-EBLs) are introduced into the epitaxial growth of InGaN-based light-emitting diodes (LEDs) on 6-inch Si (111) substrates to suppress cracking and improve the crystalline quality and emission efficiency. The effect of CBLS and QSLs-EBL on the crystalline quality and emission efficiency of InGaN-based LEDs on Si substrates was studied in detail. Optical microscopic images revealed the absence of cracks and Ga melt-back etching. The atomic force microscopy images exhibited that the root-meansquare value of the surface morphology was only 0.82 nm. The full widths at half maxima of the (0002) and (1012) reflections in the double crystal X-ray rocking curve were ∼330 and 450 arcs, respectively. The total threading dislocation density, revealed by transmission electron microscopy, was <6 × 10 8 cm −2 . From the material characterizations, described above, blue and white LEDs emitters were fabricated using the epiwafers of InGaNbased LEDs on 6-inch Si substrates. The blue LEDs emitter that comprised blue LEDs chip and clear lenses had an emission power of 490 mW at 350 mA, a wall-plug efficiency of 45% at 350 mA, and an efficiency droop of 80%. The white LEDs emitter that Manuscript comprised blue LEDs chip and yellow phosphor had an emission efficiency of ∼110 lm/W at 350 mA and an efficiency droop of 78%. These results imply that the use of a CBLS and QSLs-EBL was found to be very simple and effective in fabricating high-efficiency InGaN-based LEDs on Si for solid-state lighting applications.Index Terms-GaN, composite buffer layer structure, quaternary superlattices EBL, Si substrate, MOCVD, light-emitting diodes (LEDs).

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers

Lee

Lin

et al. 2014

IEEE J. Quantum Electron.

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“…On this basis, it should be of little surprise that LED yields struggle to exceed 90%. Wafer growth techniques to specifically address these challenges have been applied [4]. However, binning and selection of known good die remains best practice within the LED industry.…”

Section: Yield Consideration Of Iled Displaysmentioning

confidence: 99%

“…This is to be the standard for UHD applications and is almost 90% larger that the sRGB space. Recently work with quantum dots has shown that their range of wavelengths and narrow emission spectra (relative to traditional phosphors) [5] [4] can provide superior color performance. Inherently, LEDs have relatively narrow emission spectral -approx.…”

Section: Improved Color Gamutmentioning

confidence: 99%

55-2:Invited Paper: ILED Displays: Next Generation Display Technology

Henry¹,

Percival²

2016

SID Symposium Digest of Technical Papers

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The emergence of ILED Displays (also termed MicroLED Display) has the potential to be a true 4th Gen flat display technology by superseding Plasma, LCD and OLED technologies. They offer significant increase in power efficiency, brightness with reduced cost. The use of inorganic LEDs largely removes the challenge of lifetime and sealing which, until recently, has curtailed the wide adoption of OLED display. While ILED Display technology offers a range of benefits, there remain a number of issues to be addressed before this new display technology can achieve market acceptance. InfiniLED introduces the technology, discusses some of the performance characteristics and presents its practical approach to commercializing this technology.

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“…Si substrates are one of the ideal substrates owing to their thermal and electrical properties, which would induce in-plane tensile stress to compensate the compressive stress in the InGaN=GaN MQW structures. 28,29) With the improvement of wafer-bonding techniques, the efficiency of the material integration of thinfilm GaN with Si substrates can compete with that of LEDs grown on a patterned sapphire substrate. [30][31][32][33] In this study, the InGaN=GaN MQW structures were grown on 2-in.…”

mentioning

confidence: 99%

Effects of thickness on optical characteristics and strain distribution of thin-film GaN light-emitting diodes transferred to Si substrates

Li¹,

Shi²,

Feng³

et al. 2016

Appl. Phys. Express

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We investigated the effect of device thickness on the internal quantum efficiency (IQE) of thin-film GaN light-emitting diodes (LEDs), which were grown on Si substrates and transferred to other Si substrates with reduced film thickness. It was confirmed by Raman spectroscopy and photoluminescence measurement that the compressive strain is released and the quantum-confined Stark effect (QCSE) is suppressed after reducing the thickness. The best IQE of 62.9% was reached with a large suppression of the band tilting by QCSE, from 7.9 meV in the original structure to 2.4 meV in the thinnest sample, and this value can compete with that of GaN-based LEDs grown on a sapphire substrate.

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Highly Uniform Electroluminescence from 150 and 200 mm GaN-on-Si-Based Blue Light-Emitting Diode Wafers

Cited by 8 publications

References 12 publications

High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers

High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers

55-2:Invited Paper: ILED Displays: Next Generation Display Technology

Effects of thickness on optical characteristics and strain distribution of thin-film GaN light-emitting diodes transferred to Si substrates

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