Effects of thickness on optical characteristics and strain distribution of thin-film GaN light-emitting diodes transferred to Si substrates

Li, Heng; Shi, Yang; Feng, Meixin; Sun, Qingjiang; Lu, Tien‐Chang

doi:10.7567/apex.9.042101

Cited by 5 publications

(2 citation statements)

References 44 publications

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“…The other one was related to the reduced quantum-confined Stark effect (QCSE) in MQWs. [61,62] The less compressively strained AlGaN layer resulted in a reduced compressive strain in the MQWs and, thus, a suppressed QCSE. This could also lead to an enhanced radiative recombination.…”

Section: Conducting Substrate-dominated Strain-modulation In Uvb-ledsmentioning

confidence: 99%

Paving the Way for High‐Performance UVB‐LEDs Through Substrate‐Dominated Strain‐Modulation

Luo

Liu

Yang

et al. 2022

Adv Funct Materials

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AlGaN‐based ultraviolet‐B light‐emitting diodes (UVB‐LEDs) exhibit great potential in phototherapy, vitamin D3 synthesis promotion, plant growth regulation, and so on. However, subjected to the excess compressive strain induced by the large lattice mismatch between multiple quantum wells (MQWs) and AlN, UVB‐LEDs that simultaneously satisfy the requirements of high light output power (LOP), low working voltage, and excellent stability are rarely reported. Here, a substrate‐dominated strain‐modulation strategy is proposed. By precisely manipulating the strain in AlN grown on nano‐patterned sapphire substrate (NPSS) to a slightly tensile one, the compressive strain in the following Al0.55Ga0.45N underlayer and Al0.28Ga0.72N/Al0.45Ga0.55N MQWs is successfully suppressed. As a result, an outstanding UVB‐LED with a peak wavelength at 303.6 nm is achieved. The 20 × 20 mil2 UVB‐LED chip shows a wall‐plug efficiency (WPE) of 3.27% under a forward current of 20 mA and a high LOP of 57.2 mW with an extremely low voltage of 5.87 V under a forward current of 800 mA. It is more exciting that the LOP degradation is as low as 17% after 1000 h operation under a forward current density of 75 A cm−2, showing excellent stability. The here‐developed UVB‐LED, with a high LOP and excellent reliability, will definitely promote the applications of AlGaN‐based UVB‐LEDs.

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Section: Conducting Substrate-dominated Strain-modulation In Uvb-ledsmentioning

confidence: 99%

Paving the Way for High‐Performance UVB‐LEDs Through Substrate‐Dominated Strain‐Modulation

Luo

Liu

Yang

et al. 2022

Adv Funct Materials

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“…The decrease in PL intensity is caused by the defect that is created by fs-laser irradiation. After analysis of the interference phenomenon, useful information (film thickness, refractive index − ), which has a crucial role in optoelectronic devices, can be obtained. Quantitative fitting shows an excellent agreement with the measured PL spectra, which indicates that the optical properties of the GaN-based LED can be modulated by FP interference.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence Oscillations in LEDs Arise from Cylinder-like Nanostructures Fabricated by a Femtosecond Laser

et al. 2019

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Fabry−Peŕot interference has been employed in optical fibers, sensors, electron optics, and so on. The photoluminescence (PL) spectra of a gallium nitride (GaN)-based light-emitting diode (LED), which were irradiated using various femtosecond (fs)-laser fluences, were studied. Notably, the interesting oscillation of PL was observed on the LED under irradiation with specific fs-laser fluence. The PL oscillation spectra were well fitted by the product of modulation and unperturbed luminescence. This may be attributed to surface cylinder-like nanostructures. The decrease of PL intensity was caused by the defect created through fs-laser irradiation. In addition, the film thickness and the refractive index could be calculated based on the data extracted from the PL oscillation spectra. Our report demonstrated that the optical properties of a GaNbased LED were engineered based on the surface morphology and modulated by Fabry−Peŕot interference.

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LEDs Based on Heteroepitaxial GaN on Si Substrates

Egawa

Oda

2017

Topics in Applied Physics

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Effects of thickness on optical characteristics and strain distribution of thin-film GaN light-emitting diodes transferred to Si substrates

Cited by 5 publications

References 44 publications

Paving the Way for High‐Performance UVB‐LEDs Through Substrate‐Dominated Strain‐Modulation

Paving the Way for High‐Performance UVB‐LEDs Through Substrate‐Dominated Strain‐Modulation

Photoluminescence Oscillations in LEDs Arise from Cylinder-like Nanostructures Fabricated by a Femtosecond Laser

LEDs Based on Heteroepitaxial GaN on Si Substrates

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