Highly Stable ZnON Thin-Film Transistors With High Field-Effect Mobility Exceeding 50 &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$\mathrm{cm}^{2}$ &lt;/tex-math&gt;&lt;/inline-formula&gt;/Vs

Ok, Kyung‐Chul; Jeong, Hyun‐Jun; Kim, Hyun Suk; Park, Jin‐Seong

doi:10.1109/led.2014.2365614

Cited by 46 publications

(1 citation statement)

References 13 publications

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“…It was observed that the mobility of poly-Si with a small bandgap (1.1 eV) is higher than that of amorphous silicon (1.8 eV) [8]. Furthermore, amorphous zinc oxynitride (ZnON) with small bandgap (1.3 eV) has a high intrinsic mobility compared with high-bandgap materials such as ZnO (3.1 eV) [9]. At room temperature, the hole carrier mobility of Si is 475 cm 2 /Vs, while that of Ge is 1900 cm 2 /Vs [10].…”

Section: Introductionmentioning

confidence: 99%

Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si1−xGex Thin-Film Transistors

et al. 2019

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We investigated the characteristics of excimer laser-annealed polycrystalline silicon–germanium (poly-Si1−xGex) thin film and thin-film transistor (TFT). The Ge concentration was increased from 0% to 12.3% using a SiH4 and GeH4 gas mixture, and a Si1−xGex thin film was crystallized using different excimer laser densities. We found that the optimum energy density to obtain maximum grain size depends on the Ge content in the poly-Si1−xGex thin film; we also confirmed that the grain size of the poly-Si1−xGex thin film is more sensitive to energy density than the poly-Si thin film. The maximum grain size of the poly-Si1−xGex film was 387.3 nm for a Ge content of 5.1% at the energy density of 420 mJ/cm2. Poly-Si1−xGex TFT with different Ge concentrations was fabricated, and their structural characteristics were analyzed using Raman spectroscopy and atomic force microscopy. The results showed that, as the Ge concentration increased, the electrical characteristics, such as on current and sub-threshold swing, were deteriorated. The electrical characteristics were simulated by varying the density of states in the poly-Si1−xGex. From this density of states (DOS), the defect state distribution connected with Ge concentration could be identified and used as the basic starting point for further analyses of the poly-Si1−xGex TFTs.

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Section: Introductionmentioning

confidence: 99%

Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si1−xGex Thin-Film Transistors

et al. 2019

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Drying‐Mediated Self‐Assembled Growth of Transition Metal Dichalcogenide Wires and their Heterostructures

Lee

Singh

et al. 2015

Advanced Materials

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Figure 1 a depicts the dip coating process for the production of certain classes of TMD structures. First, a piece of SiO 2 / Si or quartz wafer is immersed into an aqueous (NH 4 ) 2 MoS 4 (or (NH 4 ) 2 WS 4 ) solution (0.23% w/v (g mL −1 ) in DI water) and removed at different speeds to control the drying velocity. As the water evaporates, small nuclei are formed at the solution-substrate interface, and these nuclei initiate the growth of various solid (NH 4 ) 2 MoS 4 , or (NH 4 ) 2 WS 4 morphologies as intermediate states of MoS 2 and WS 2 . The self-assembled TMD morphologies are strongly dependent on the evaporation rate of the solvent and the diffusion rate of the TMD-precursors in solution. Figure 1 b,c presents optical images of the selfassembled (NH 4 ) 2 MoS 4 structures formed at different evaporation speeds and pH conditions. At very fast evaporation speeds (approximately 320 nl s −1 ) induced by high temperature (80 °C), a uniform thin fi lm of (NH 4 ) 2 MoS 4 was formed after the complete removal of the solvent (condition A, Figure 1 b) because there was insuffi cient time to induce the formation of nucleation seeds. In contrast, at evaporation speeds that were two orders of magnitude slower (0.67-1.72 nl s −1 ), dendritic structures were formed (condition B, Figure 1 c). The dendrite structures have many worm-like stems with a large number small side branches; self-assemblies of these seeds randomly formed on the substrate.In addition to these two nonoriented phases, the spontaneous formation of well-oriented wire patterns was observed when the acidity of solution increased from pH 6.41 to pH 5.02 at the same evaporation speed as condition B (condition C, Figure 1 d). Interestingly, these long wires, which grew from seeds formed in parallel arrays at the initial solution/substrate/air contact line, displayed uniform spacing between the wires without serious distortion of the arrays. The formation of aligned wires can be explained by the "fi ngering instability" phenomenon. [ 18,19 ] When the solvent begins evaporating at the solution/substrate contact line, fi ngering instability induced by the regulation of the evaporation speed, which affects the internal fl ow of the solution, leads to the periodic formation of nucleation-seed arrays. In turn, this results in the spontaneous growth of regular, unidirectional wire arrays from the seeds during the drying process (Figure 1 d). The critical dependence of the directional growth mechanism on the pH variation is not yet clear. However, we believe that the acidity of the reaction media can effectively suppress the gradation of the precursor diffusion, which is the driving force in the generation of the dendrite side-arms and the lateral expansion of the selfassembly, thereby preserving the main stream and, as a result, enhancing the formation of aligned wire arrays. [ 20 ] Thus, the evaporation speed, solution concentration and pH are the key factors that control the nucleation and growth processes, which lead to different self-assembled structures.A sub...

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All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride

Reinhardt

Wenckstern

Grundmann

2021

Adv Elect Materials

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This report is on the electrical properties of all‐amorphous junction field‐effect transistors (JFETs) based on n‐type zinc oxynitride (ZnON) as a channel material and room‐temperature deposited p‐type ZnCo2O4 (ZCO) as a heterojunction gate. Devices with different channel thicknesses are thereby compared. Best devices with 48 nm channel layer thickness achieve drain current on/off–ratios of 105 and low subthreshold swing of 134 mV dec−1 within a gate voltage sweep of less than 2 V. The channel mobility extraction is reliable for 90 nm‐thick channels yielding saturation mobility values over 50 cm2 V−1 s−1. For JFETs with 48 nm‐thick channels an overestimation of the saturation mobility due to deviations from the ideal transistor characteristics is determined.

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Highly Stable ZnON Thin-Film Transistors With High Field-Effect Mobility Exceeding 50 <inline-formula> <tex-math notation="LaTeX">$\mathrm{cm}^{2}$ </tex-math></inline-formula>/Vs

Cited by 46 publications

References 13 publications

Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si1−xGex Thin-Film Transistors

Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si1−xGex Thin-Film Transistors

Drying‐Mediated Self‐Assembled Growth of Transition Metal Dichalcogenide Wires and their Heterostructures

All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride

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