All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride

Reinhardt, Anna; Wenckstern, Holger von; Grundmann, Marius

doi:10.1002/aelm.202000883

Cited by 5 publications

(4 citation statements)

References 26 publications

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“…Figure S10 (Supporting Information) depicts that the g m increases significantly from −4.73 to −10.50 μS by applying a V bg of −20 V at same V ds of 0.5 V. Thus, the p-channel JFET achieves an excellent mobility of up to 317.6 cm 2 V −1 s −1 under dual-gate modulation as depicted in Figure S11 (Supporting Information), surpassing the vast majority of reported p-channel vdW-JFETs. [16,[41][42][43]…”

Section: Performance Of P-channel Jfetsmentioning

confidence: 99%

Thinning Solution‐proceed 2D Te for p‐ and n‐channel Junction Field Effect Transistor with High Mobility and Ideal Subthreshold Slope

Zhu,

Zhang,

Chen

et al. 2024

Adv Funct Materials

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Two‐dimensional non‐layered tellurene (Te) can serve as a promising candidate in transistor applications because of its high carrier mobility and air stability. However, it is still quite challenging in aspect of ultra‐thin channel and gate‐control ability in conventional metal‐oxide‐semiconductor field‐effect transistor architecture. This work proposes a facile thinning strategy for solution‐proceed Te flakes and fabricates a junction field‐effect transistor (JFET) architecture, that has well addressed the above‐mentioned two issues. Through a mild oxidative thinning process, the post‐growth Te flakes are thinned from bulk to few‐layer, guaranteeing the highly efficient electrostatic doping as a transistor channel. Then, a four‐terminal JFET‐based on p‐Te and n‐ReS2 is designed, achieving a multifunctional integration of rectification diode, p‐ and n‐channel transistor in one single device. By accessing different contact scheme, the ReS2/Te p‐n diode is explored with a rectification ratio of 103, the p‐channel JFET exhibits a high hole mobility of 317.6 cm2V−1s−1, ideal low subthreshold swing of 84 mV dec−1. While the n‐channel JFET is obtained with electron mobility of 67.6 cm2 V−1s−1 and SS of 229 mV dec−1. Both p‐ and n‐channel devices showcase clear saturation characteristic with ultra‐small pinch‐off voltage (≈0.4 V), which is crucial for low‐power logical and integrated circuit applications.

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Section: Performance Of P-channel Jfetsmentioning

confidence: 99%

Thinning Solution‐proceed 2D Te for p‐ and n‐channel Junction Field Effect Transistor with High Mobility and Ideal Subthreshold Slope

Zhu,

Zhang,

Chen

et al. 2024

Adv Funct Materials

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“…Amorphous oxide semiconductors (AOSs) (e.g., In-Ga-Zn-O (IGZO) is a representative AOS material) have been successfully commercialized because TFTs with an IGZO active channel layer have a higher field-effect mobility (>10 cm 2 /Vs) than amorphous silicon-based TFTs (∼1 cm 2 /Vs), notwithstanding light-induced instability. − However, around 10 cm 2 /Vs field-effect mobility in conventional IGZO-based transistor devices is still low; thus, it is not sufficient for the HSE applications. In this regard, zinc oxynitride (ZnON) has recently been suggested as a promising candidate for overcoming the performance and stability limitations of AOSs by deactivating instability sources such as disorder defects (i.e., peroxide and undercoordinated cations) and anion deficiency (hereafter, sometimes referred to as N-vacancy (V N ) as in the crystal structure for convenience). − In comparison to conventional AOSs, the ZnON-based TFTs successfully boosted the field-effect mobility (>50 cm 2 /Vs) and improved the light-stressed stability. − Unfortunately, despite these benefits, their practical application has been delayed due to difficulties in (i) protecting nitrogen volatilization during prolonged exposure to air (air stability) and (ii) controlling the most stable and shallow donor V N associated with transport degradation (carrier controllability).…”

Section: Introductionmentioning

confidence: 99%

Nonvolatile High-Speed Switching Zn-O-N Thin-Film Transistors with a Bilayer Structure

Naqi

Jang

Park

et al. 2022

ACS Appl. Mater. Interfaces

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Zinc oxynitride (ZnON) has the potential to overcome the performance and stability limitations of current amorphous oxide semiconductors because ZnON-based thin-film transistors (TFTs) have a high field-effect mobility of 50 cm2/Vs and exceptional stability under bias and light illumination. However, due to the weak zinc–nitrogen interaction, ZnON is chemically unstableN is rapidly volatilized in air. As a result, recent research on ZnON TFTs has focused on improving air stability. We demonstrate through experimental and first-principles studies that the ZnF2/ZnON bilayer structure provides a facile way to achieve air stability with carrier controllability. This increase in air stability (e.g., nitrogen non-volatilization) occurs because the ZnF2 layer effectively protects the atomic mixing between ZnON and air, and the decrease in the ZnON carrier concentration is caused by a shallow-to-deep electronic transition of nitrogen deficiency diffused from ZnON into the interface. Further, the TFT based on the ZnF2/ZnON bilayer structure enables long-term air stability while retaining an optimal switching property of high field-effect mobility (∼100 cm2/Vs) even at a relatively low post-annealing temperature. The ZnF2/ZnON-bilayer TFT device exhibits fast switching behavior between 1 kHz and 0.1 MHz while maintaining a stable and clear switching response, paving the way for next-generation high-speed electronic applications.

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“…From the scope of CBM, ZnON is also believed to be an excellent candidate for electronics, based on DFT calculations, indicating that the effective mass of crystalline Zn 3 N 2 was much smaller than that of other metal oxide semiconductors ( i.e. , IGZO, ZnO, and In 2 O 3 ). , This was experimentally demonstrated by ZnON thin films − and TFTs, − exhibiting high mobility even in the amorphous/nanocrystalline phase. Note that the effective mass of amorphous ZnON (a-ZnON) was also smaller than those of aforementioned metal oxide semiconductors. , This highly disordered structure was dominant when a sufficient amount of nitrogen was incorporated, followed by remarkable electrical properties.…”

Section: Introductionmentioning

confidence: 99%

“…Over the past few years, most studies on ZnON thin films have used reactive sputtering of metallic Zn targets under Ar/O 2 /N 2 gas mixtures. − ,− ,− This method is advantageous for achieving desirable compositions and properties of ZnON thin films because it enables comprehensive combinations of each gas flow rate. In general, the flow rate of the N 2 gas was the highest among the gas mixtures to incorporate nitrogen as many as possible into ZnON.…”

Section: Introductionmentioning

confidence: 99%

In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses

Jang

Lee

2022

ACS Appl. Electron. Mater.

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We present comprehensive studies on ZnON thin films deposited by radio-frequency (RF) magnetron sputtering using a ZnO target under various nitrogen plasma conditions. A ZnON thin film grown under the highest nitrogen partial flow rate exhibits the lowest optical bandgap of 1.84 eV, excellent stability upon air exposure, an amorphous/nanocrystalline structure, and the strongest stoichiometric Zn3N2 chemical states. The highest field-effect mobility of 4.28 cm2 V–1 s–1, the largest responsivity, and the negligible persistent photoconductivity (PPC) effect against visible light are also realized by the thin-film transistor (TFT) configuration. The device performance of the ZnON phototransistor is compared to those of other oxide semiconductors of ZnO and InGaZnO (IGZO). Finally, an IGZO/ZnON phototransistor, where ZnON was deposited on top of IGZO by an in situ process, demonstrates high specific detectivities (1.65 × 1013, 1.35 × 1013, and 2.0 × 1014 Jones against red, green, and blue photons, respectively) without the PPC effect. We examined the photoluminescence (PL) spectra of ZnON with respect to nitrogen-associated defects, which are yet to be discussed, and emphasize that our optimum deposition process is free of the poisoning effect. To our knowledge, this is the first report on a ZnON phototransistor in which the channel was prepared by reactive sputtering of a ZnO target.

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All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride

Cited by 5 publications

References 26 publications

Thinning Solution‐proceed 2D Te for p‐ and n‐channel Junction Field Effect Transistor with High Mobility and Ideal Subthreshold Slope

Thinning Solution‐proceed 2D Te for p‐ and n‐channel Junction Field Effect Transistor with High Mobility and Ideal Subthreshold Slope

Nonvolatile High-Speed Switching Zn-O-N Thin-Film Transistors with a Bilayer Structure

In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses

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