Thinning Solution‐proceed 2D Te for p‐ and n‐channel Junction Field Effect Transistor with High Mobility and Ideal Subthreshold Slope
Lingyu Zhu,
Jielian Zhang,
Xinhao Chen
et al.
Abstract:Two‐dimensional non‐layered tellurene (Te) can serve as a promising candidate in transistor applications because of its high carrier mobility and air stability. However, it is still quite challenging in aspect of ultra‐thin channel and gate‐control ability in conventional metal‐oxide‐semiconductor field‐effect transistor architecture. This work proposes a facile thinning strategy for solution‐proceed Te flakes and fabricates a junction field‐effect transistor (JFET) architecture, that has well addressed the ab… Show more
This review covers a comprehensive overview of the synthesis methods, morphological control, properties, and potential applications of Te-based nanostructures, providing a broad overview for readers interested in this exciting field.
This review covers a comprehensive overview of the synthesis methods, morphological control, properties, and potential applications of Te-based nanostructures, providing a broad overview for readers interested in this exciting field.
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