Highly sensitive submillimeter InSb photodetectors

Vasilyev, Yu. B.; Usikova, A. A.; Il’inskaya, N. D.; Petrov, P. V.; Ivanov, Yu. L.

doi:10.1134/s1063782608100163

Cited by 12 publications

(5 citation statements)

References 1 publication

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“…Figure 51 shows spectral dependence of detectivity of InSb HEB [193]. Today, also other semiconductor materials are proposed in HEBs fabrication [194][195][196]. In spite of the fact that the rate of electron heating is extremely high because of high rate of photon−electron interaction, the maximum transfor− mation frequency is restricted by the thermal relaxa− tion rate, which in semiconductors is governed by elec− tron−phonon interaction time t »10 -7 s at low temperatures [197].…”

Section: Semiconductor Hot Electron Bolometersmentioning

confidence: 99%

Terahertz detectors and focal plane arrays

Rogalski

Сизов

2011

Opto-Electronics Review

318

225

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Terahertz (THz) technology is one of emerging technologies that will change our life. A lot of attractive applications in security, medicine, biology, astronomy, and non-destructive materials testing have been demonstrated already. However, the realization of THz emitters and receivers is a challenge because the frequencies are too high for conventional electronics and the photon energies are too small for classical optics. As a result, THz radiation is resistant to the techniques commonly employed in these well established neighbouring bands.In the paper, issues associated with the development and exploitation of THz radiation detectors and focal plane arrays are discussed. Historical impressive progress in THz detector sensitivity in a period of more than half century is analyzed. More attention is put on the basic physical phenomena and the recent progress in both direct and heterodyne detectors. After short description of general classification of THz detectors, more details concern Schottky barrier diodes, pair braking detectors, hot electron mixers and field-effect transistor detectors, where links between THz devices and modern technologies such as micromachining are underlined. Also, the operational conditions of THz detectors and their upper performance limits are reviewed. Finally, recent advances in novel nanoelectronic materials and technologies are described. It is expected that applications of nanoscale materials and devices will open the door for further performance improvement in THz detectors.

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Section: Semiconductor Hot Electron Bolometersmentioning

confidence: 99%

Terahertz detectors and focal plane arrays

Rogalski

Сизов

2011

Opto-Electronics Review

318

225

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“…The InSb photodetectors by providing excellent performance in the 1-5.5 μm wavelength region play important roles in optoelectronic devices. [9,[24][25][26][27][28] For instance, the InSb can be used as a signal receiver for the mid-infrared in silicon photonics. [29] Stress is one of the important factors that can change the optical and hence the electrical properties of a semiconductor.…”

Section: Introductionmentioning

confidence: 99%

Characteristics Analysis of Leakage Current in an Array of InSb Photodetector: The Effect of Compressive and Tensile Stresses

Heidarzadeh

2023

Physica Status Solidi (b)

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Herein, the effect of tensile and compressive stress on the performance of a 3 × 3 InSb array as an infrared photodetector is investigated. At first, the effect of mesh sizes on simulated results is evaluated and the results are validated with a good agreement. It is shown that the main effect of stress is related to the Γ (bandgap) point of the band structure. This shift causes the densities of intrinsic and minority carriers to decrease in the case of tensile stress and increase in the case of compressive stress. Using a 3D simulation, it is investigated that tensile stress reduces the dark current while compressive stress induces that. However, it is an interesting result that an increment in applied compressive stress interrupts the InSb photodetector performances and vice versa tensile stress helps the photocurrent to have a lower dark current. So, these results can be used to manage the dark current in the field of the photodetector. Finally, the crosstalk of the simulated structure as one of its main characteristics is calculated.

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“…[ 6–12 ] Conventional infrared photodetectors with high performance mainly include HgCdTe, [ 13 ] GaSb/InAs, [ 14,15 ] and InSb. [ 16,17 ] However, the complex fabrication, low operating temperature, and immutable bandgaps of these photodetectors restrict their applications. [ 18,19 ] Moreover, although photodetectors with different wavebands have their own advantages in application, wide‐waveband photodetectors are searched faithfully to meet the application requirements for various unforeseen circumstances.…”

Section: Introductionmentioning

confidence: 99%

Semiconductor–Semimetal Transition‐Driven Photocurrent Spurt and Infrared Band Response in Lead Iodide at High Pressure

Cheng

Yan

et al. 2023

Advanced Optical Materials

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Topological semimetals have attracted flourishing interest as promising candidates for their unique advantages in achieving highly sensitive, low-energy photodetection with ultrafast operation. Although various semimetals have been explored recently, new semimetals are still being pursued for high-responsivity photodetectors with broadband response. Here, a pressure-induced semiconductor-semimetal transition is observed in two-dimensional wide-band semiconducting lead iodide (PbI 2 ). The photocurrent under visible light shows abrupt increases by two orders of magnitude at ≈25 GPa, where the crystalline structure transforms from the Pnma to I4/MMM phase. Meanwhile, the responding band expands from visible light to at least the telecom wavelength 1550 nm. The high-pressure absorption spectra of PbI 2 suggest that the electrical band is closed at the transition point, while the charge transport shows that the sample is still not metallic. Through first-principles calculations, the photocurrent spurt and infrared band response are attributed to the appearance of a semimetal phase at high pressure, which well explains the nonmetallic transport. The prominent drop in lifetime to a few picoseconds in ultrafast spectroscopy under pressure further confirms the semiconductor-semimetal transition in PbI 2 . Pressure-induced semimetallization opens a new strategy for designing a high-performance photodetector with broadband response.

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Highly sensitive submillimeter InSb photodetectors

Cited by 12 publications

References 1 publication

Terahertz detectors and focal plane arrays

Terahertz detectors and focal plane arrays

Characteristics Analysis of Leakage Current in an Array of InSb Photodetector: The Effect of Compressive and Tensile Stresses

Semiconductor–Semimetal Transition‐Driven Photocurrent Spurt and Infrared Band Response in Lead Iodide at High Pressure

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