I–V and L–I characteristics as well as photocurrent in monolithic p‐InAsSbP/n‐InAs double heterostructure (λ = 3.4 μm) with several mesas/individual diodes grown onto a single n+‐InAs substrate have been measured at an activation of one of the diodes at ambient temperature in the presence of water, ethanol, and H20 + C2H5OH mixture at the n+‐InAs substrate surface. Adequately sufficient photocurrent values, the evidence for the absorption of internally reflected infrared radiation at the n+‐InAs substrate/liquid interface together with the correlation between the photocurrent and liquid chemical composition indicate the possibility of developing p‐InAsSbP/n‐InAs double heterostructures into a miniature monolithic “on‐chip” evanescent wave sensor of different liquids.
The terahertz (THz) emission with the maximum at the 3–5 THz is observed under electrical pumping from InN epilayers, where structural imperfections such as nanocolumns, pores, and In clusters are situated with a certain periodicity. This radiation is ascribed to the spontaneous emission of surface plasmon polariton like waves guided in thin surface/interior layers and coupled to electromagnetic field at these imperfections. These waves are generated thermally under applied electric field. The registered THz spectra and power dependences are well consistent with this plasmon-related radiation mechanism.
N-InAsSbP/InAs/P-InAsSbP double heterostructures have been grown onto n+-InAs substrate and further processed into 2×2 photodiode array containing no n+-InAs. C-V, spectral response as well as mid-IR photoluminescence and electroluminescence in the 77-300 K temperature range have been measured and used for photodiode characterization including D*(λ) and BLIP temperature evaluation.
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