Substrate-removed flip-chip photodiode array based on InAsSbP/InAs double heterostructure

Abstract

N-InAsSbP/InAs/P-InAsSbP double heterostructures have been grown onto n+-InAs substrate and further processed into 2×2 photodiode array containing no n+-InAs. C-V, spectral response as well as mid-IR photoluminescence and electroluminescence in the 77-300 K temperature range have been measured and used for photodiode characterization including D*(λ) and BLIP temperature evaluation.

p‐InAsSbP/n‐InAs Double Heterostructure as an On‐Chip Midinfrared Evanescent Wave Sensor of Liquids

“…On‐chip design allows fabrication sensor with good heatsinking via flip‐chip bonding that minimize thermal resistance/distance between p‐n junction and the heatsink, for example, using Si submounts with Sb+Sn bonding areas. [ 12–15,17,20,29,30 ]…”

“…The transmission spectra of such substrates exhibit a smooth long‐wave shoulder originated from a free carrier absorption that increases with wavelength and a sharp short‐wave shoulder associated with interband electron transitions. [ 17 ] From the data in ref. [17], the temperature dependence of the transmission maximum t max of a 460 μm thick n + ‐InAs plate and the wavelength at maximum λ max could be expressed as: t max = 0.522– T × 7.28 × 10 −4 , λ max (μm) = 2.102 + T × 5.03 × 10 −3 respectively.…”

“…[ 17 ] From the data in ref. [17], the temperature dependence of the transmission maximum t max of a 460 μm thick n + ‐InAs plate and the wavelength at maximum λ max could be expressed as: t max = 0.522– T × 7.28 × 10 −4 , λ max (μm) = 2.102 + T × 5.03 × 10 −3 respectively. The substrate transparency amounts to 0.9 (λ max = 2.51 μm) at T = 80 K and reduces down to 0.6 ( λ max = 3.61 μm) at room temperature (RT) and down to 0.4 ( λ max = 4.11 μm) at T = 400 K.…”

“…The temperature variation of PD cut‐off wavelengths ( λ 0.1 and λ 0.5 , respectively) as well as the LED emission maximum matched well the known variation of InAs energy gap known as the Varshini formula: E g = 415–0.28 × T 2 /( T + 83) (meV). [ 17 ] At the temperature increment of = 10 K the EL emission maximum shift amounts to Δ λ max ≈ 0.06 μm, while the emission intensity change is around 10%.…”

К вопросу о механизмах разогрева светодиодов на основе p-InAsSbP/n-InAs(Sb)

“…IQE 77 K = 1, а ζ 77 K 300 K = (EQE 77 K /EQE 300 K ) = (P LED,77 K /P LED, 300 K ) -коэффициент температурного гашения ЭЛ 3 . Согласно данным, приведенным в работе [25], коэффициент температурного гашения в аналогичных ДГС с удаленной подложкой составляет ζ 77 K 300 K ∼ 20, 4 поэтому данные для IQE 77 K и IQE 300 K не согласуются друг с другом (IQE 77 K ≪ IQE 300 K ζ 77 K 300 K ). С учетом изменения пропускания подложки [25] при понижении температуры ожидаемый коэффициент вывода излучения γ при 77 K несколько возрастает, но расхождение определяемых с помощью соотношений (2) и (3) величин сохранится.…”