Low frequency noise in reverse biased double heterostructure P-InAsSbP/n-InAs infrared photodiodes

Abstract

Low frequency reverse current noise is studied for the first time in InAsSbP/InAs double heterostructure (DH) photodiodes in the frequency range 1 Hz-10 4 Hz at 300 K and 100 K. At room temperature, the noise in the DH photodiodes is 1/f and might be significantly lower (by ∼17 dB) than in single heterostructure InAsSbP/InAs photodiodes. In the practically most important regime of low reverse currents, I rb , the current dependence of spectral noise density is proportional to I 2 rb , both at 300 K and 100 K. The reverse current noise might provide the limit for the detectivity of DH photodiodes at I rb > 3 × 10 −6 A at 300 K and I rb > 8 × 10 −9 A at 100 K.