Highly Scaled GaN Complementary Technology on a Silicon Substrate

Abstract

This article reports on the scaling of GaN complementary technology (CT) on a silicon substrate to push its performance limits for circuit-level applications. The highly scaled self-aligned (SA) p-channel FinFET (a fin width of 20 nm) achieved an I D,max of −300 mA/mm and an R ON of 27 •mm, a record for metal organic chemical vapor deposition (MOCVD)-grown III-nitride p-FETs. A systematic study on impact of fin width scaling and recess depth in these transistors was conducted. A new SA scaled n-channel p-GaN-gate FET (n-FET) process, compatible with the p-FinFET, demonstrated enhancement-mode (E-mode) n-FETs (L G = 200 nm, I D,max = 525 mA/mm, and R ON = 2.9 •mm) on the same epitaxial platform. The p-FETs and n-FETs feature competitive performance in their respective categories and, when taken together, offer a leading solution for GaN CT on a silicon substrate.

III-Nitride Materials: Properties, Growth, and Applications

“…Nowadays, the p-GaN gate is more commonly used to obtain enhancement-mode GaN HEMTs [55]. At present, p-channel GaN field effect transistors (FETs) are attracting attention, with potential in fabricating GaN-based complementary integrated circuits [56][57][58][59].…”