In this work, we demonstrate a self-aligned p-FET with a GaN/Al0.2Ga0.8N (20 nm)/GaN heterostructure grown by metal-organic-chemical vapor deposition (MOCVD) on Si substrate. Our 100 nm channel length device with recess depth of 70 nm exhibits a record ON-resistance of 400 Ω•mm and ONcurrent over 5 mA/mm with ON-OFF ratio of 6×10 5 when compared with other p-FET demonstrations based on GaN/AlGaN heterostructure. The device shows E-mode operation with a threshold voltage of −1 V, making it a promising candidate for GaN-based complementary circuit that can be integrated on a Silicon platform. A monolithically integrated n-channel transistor with p-GaN gate is also demonstrated. The potential of the reported p-FET for complementary logic application is evaluated through industrystandard compact modeling and inverter circuit simulation.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.