Highly scaled equivalent oxide thickness of 0.66 nm for TiN/HfO₂/GaSb MOS capacitors by using plasma-enhanced atomic layer deposition

Abstract

Through in situ hydrogen plasma treatment (HPT) and plasma-enhanced atomic-layer-deposited TiN (PEALD-TiN) layer capping, we successfully fabricated TiN/HfO2/GaSb metal–oxide–semiconductor capacitors with an ultrathin equivalent oxide thickness of 0.66 nm and a low density of states of approximately 2 × 1012 cm−2 eV−1 near the valence band edge. After in situ HPT, a native oxide-free surface was obtained through efficient etching. Moreover, the use of the in situ PEALD-TiN layer precluded high-κ dielectric damage that would have been caused by conventional sputtering, thereby yielding a superior high-κ dielectric and low gate leakage current.

Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition

“…[1][2][3][4][5][6] The outstanding performance of GaSb-based MOS devices on GaSb commercial substrates has been reported in recent years. [7][8][9][10] However, GaSb substrates are expensive, fragile, and only available in the small sizes. Si manufacturing technology is mature and has been widely used for large-scale mass production.…”