Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition

Abstract

A GaSb epilayer is grown on a GaAs/Si(001) epitaxial substrate via metalorganic chemical vapor deposition. High-resolution transmission electron microscopy micrographs and high-resolution X-ray reciprocal space mapping indicate an entirely relaxed interfacial misfit (IMF) array GaSb epilayer. The valence-band offset and conduction-band offset of the Al 2 O 3 /GaSb/GaAs/Si structure are estimated to be 2.39 and 3.65 eV, respectively. The fabricated Al 2 O 3 /p-GaSb/GaAs/Si MOS capacitors exhibited good capacitance-voltage characteristics with a small accumulation frequency dispersion of approximately 1.05% per decade. These results imply that the GaSb epilayer grown on the GaAs/Si platform in the IMF mode can be used for future complementary metal-oxide semiconductor applications.

High Hole Mobility Polycrystalline GaSb Thin Films

“…Polycrystalline GaSb with high hole mobilities has previously been achieved using higher temperatures [20] or III-V substrates [21]. Growing polar GaSb on non-polar SiO 2 has traditionally proven difficult [22], but a novel metalorganic vapor phase epitaxy (MOVPE) "droplet epitaxy" method at 475 • C has been shown to work [23].…”